UNR911LJ0L

Overview

The UNR911LJ0L is a Silicon PNP epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features a collector-emitter voltage of -50 V and a maximum collector current of -100 mA. The device includes an internal base resistor (R1) of 4.7 kΩ and an emitter resistor (R2) of 4.7 kΩ. Key electrical characteristics include a forward current transfer ratio (hFE) minimum of 20 at IC = -5 mA and VCE = -10 V, and a collector-emitter saturation voltage of -0.25 V at IC = -10 mA and IB = -0.3 mA. The transition frequency is 80 MHz, and the total power dissipation is rated at 125 mW.

Feature Summary

• Integrates dual bias resistors to reduce component count and equipment size
• Utilizes SS-Mini type package for automatic insertion via tape packing

Applications

• Digital circuit switching applications
• Logic interface circuits
• Driver circuits for low-power loads

Procurement Notes

Verify the specific suffix '0L' against official Panasonic documentation to confirm packaging details, as datasheets may list standard reel configurations. Confirm RoHS compliance status and lifecycle stage directly with the manufacturer or authorized distributors before procurement.

Selection Notes

Select this component when a PNP transistor with integrated biasing is required for space-constrained digital designs. Ensure the 4.7 kΩ/4.7 kΩ resistor configuration matches the circuit requirements. Verify that the -50 V voltage rating and -100 mA current capacity are sufficient for the target application load.

Part Context

This part belongs to the UNR911xJ Series from Panasonic Industry. The series comprises various PNP transistors with different internal resistor combinations tailored for specific logic levels and drive currents. The UNR911LJ variant specifically provides equal resistance values for both base and emitter connections.

Replacement Considerations

Nexperia PDTA144VM,315 is listed as a similar replacement option.