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The UNR911NG0L is a silicon PNP epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an SSMini3-F3 package with pin configuration of Base (1), Emitter (2), and Collector (3). The device supports a maximum collector current of 100 mA and a total power dissipation of 125 mW at 25°C. Key electrical parameters include a collector-emitter voltage of -50 V, a forward current transfer ratio (hFE) ranging from 80 to 400 at IC = -5 mA and VCE = -10 V, and a transition frequency of 80 MHz. The integrated resistors are R1 = 4.7 kΩ and R2 = 4.7 kΩ.
Verify the specific suffix 'G0L' against official Panasonic documentation to confirm exact resistor values and lifecycle status. Check for maintenance or discontinued classifications on the manufacturer's website before finalizing procurement plans.
Select this component when a compact PNP pre-biased transistor is required for digital logic interfaces. Ensure the 4.7 kΩ internal resistance values match the circuit design requirements. Verify that the SSMini3 package dimensions fit the target PCB layout constraints.
This component belongs to the UNR911xG series of composite devices manufactured by Panasonic Industry. The series offers various combinations of built-in resistors tailored for different digital circuit needs while maintaining consistent electrical characteristics across the family.
Consult official Panasonic resources for verified substitutes. Generic replacements may not replicate the specific 4.7 kΩ / 4.7 kΩ resistor configuration or the SSMini3 package footprint.