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The UNR911TJ0L is a PNP epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features a collector-emitter voltage (VCEO) of -50 V and a maximum collector current (IC) of -100 mA. The device dissipates up to 125 mW at 25°C. Internal resistors are R1 = 22 kΩ and R2 = 47 kΩ. DC current gain (hFE) ranges from 80 to 400 at IC = -5 mA, VCE = -10 V. Transition frequency (fT) is 80 MHz. Collector-base cutoff current (ICEO) is max 0.5 µA. Saturation voltage (VCE(sat)) is 0.25 V at IC = -10 mA, IB = -0.3 mA.
Verify the exact part number against official manufacturer documentation before procurement. Confirm that the specific suffix matches the required resistor values and package variant. Check current lifecycle status as components may be discontinued or subject to maintenance plans. Ensure compliance with relevant environmental directives such as RoHS if applicable to the project requirements.
Select this component when a compact PNP pre-biased transistor is needed for digital logic interfacing. Verify that the internal resistance values (22 kΩ and 47 kΩ) align with the specific drive requirements of the target circuit. Consider the 50 V voltage rating and 100 mA current limit to ensure adequate headroom for the application's operating conditions.
This component belongs to the Panasonic UNR911xJ series of transistors with built-in resistors. The series offers various combinations of internal resistances to suit different digital switching needs. The UNR911TJ0L specifically provides a 22 kΩ base resistor and a 47 kΩ emitter resistor within an SS-Mini3-F1 package.
Public confirmed substitute part numbers: None identified in verified sources.