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The Panasonic UNR91A5G0L is a Silicon PNP epitaxial planar transistor with a built-in bias resistor, designed for digital circuits. It operates with a maximum collector-emitter voltage of -50 V and a collector current of -80 mA. The device features a minimum forward current transfer ratio (hFE) of 160 at -5 mA and -10 V, with a transition frequency of 80 MHz. Total power dissipation is rated at 125 mW. It utilizes the SSMini3-F3 surface-mount package, measuring 1.6 mm by 0.8 mm, and complies with RoHS directives.
Verify the specific ordering suffix against official Panasonic documentation to confirm packaging type and compliance status. Confirm availability as the product lifecycle may include maintenance or discontinuation stages. Request the latest Product Standards directly from the manufacturer before final purchasing decisions to ensure specifications remain current.
Select this component when a compact PNP transistor with integrated biasing is required for standard digital logic applications. Ensure the operating voltage does not exceed -50 V and the collector current remains within -80 mA limits. Verify that the SSMini3-F3 package dimensions fit the target PCB layout constraints.
This component belongs to the Panasonic UNR91 series of transistors with built-in resistors. These devices are engineered specifically for digital circuits where space efficiency and simplified assembly are priorities. The series offers various configurations to support different logic levels and switching speeds while maintaining a small footprint.
Consult official Panasonic cross-reference lists for verified substitutes. Generic equivalents may differ in internal resistor ratios or hFE characteristics. Do not assume pinout compatibility without verifying the specific package variant against the original datasheet.
The device features a single PNP transistor with a built-in bias resistor connected between the base and emitter terminals.
The minimum forward current transfer ratio (hFE) is 160 when measured at a collector current of -5 mA and a collector-emitter voltage of -10 V.
The total power dissipation (PT) is rated at 125 mW at an ambient temperature of 25°C.