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The UNR9210G0L is a silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an SSMini3-F3 package with three pins: Base (Pin 1), Emitter (Pin 2), and Collector (Pin 3). The device has a collector-emitter voltage rating of 50 V and a maximum collector current of 100 mA. Total power dissipation is rated at 125 mW. The internal configuration includes a single base resistor (R1) of 47 kΩ. Electrical characteristics specify a forward current transfer ratio (hFE) ranging from 160 to 460 at IC = 5 mA and VCE = 10 V. The transition frequency is 150 MHz.
Verify the specific ordering suffix against official Panasonic documentation to confirm pinout and resistance values. Check the manufacturer's website for current lifecycle status, as this series may be subject to maintenance or discontinuation phases. Ensure compatibility with required ambient temperature ranges and soldering profiles during procurement planning.
Select this component when a compact NPN switch with integrated base drive is required. The 47 kΩ internal resistor simplifies circuit design by eliminating external base resistors. Verify that the 100 mA collector current and 50 V breakdown voltage meet the load requirements. Consider the 125 mW power dissipation limit relative to the operating ambient temperature.
This part belongs to the UNR921xG series of transistors with built-in resistors manufactured by Panasonic Electronic Components. The series offers various resistor configurations to suit different logic families and drive requirements. The '0L' suffix typically denotes specific packaging or compliance variations within the product line.
Consult the official Panasonic replacement list for direct substitutes. Cross-reference electrical parameters such as hFE, VCEO, and internal resistance values when evaluating alternative components.