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The UNR9212G0L is a silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an SSMini3-F3 package with pin configuration of Base (1), Emitter (2), and Collector (3). The device supports a collector current of 100 mA and withstands collector-emitter voltages up to 50 V. Internal resistance values are R1 = 22 kΩ and R2 = 22 kΩ. Key electrical characteristics include a forward current transfer ratio (hFE) ranging from 60 to 400 at IC = 5 mA, and a transition frequency (fT) of 150 MHz.
Verify the specific ordering suffix against Panasonic Industry documentation to confirm packaging type and compliance status. Confirm RoHS Directive (EU 2002/95/EC) compliance through official datasheets or manufacturer declarations before integration into production designs.
Select this component when a pre-biased NPN transistor with equal base and emitter resistances is required. Ensure the 22 kΩ internal resistance values align with the target circuit's drive requirements. Verify that the 100 mA collector current and 50 V voltage ratings exceed the maximum operational loads.
This part belongs to the UNR921xG series manufactured by Panasonic Electronic Components. The series comprises various NPN transistors with different built-in resistor configurations, all sharing the same core semiconductor structure and package dimensions for standardized design implementation.
Consult official Panasonic replacement lists for verified substitutes. Cross-reference internal resistance ratios and hFE ranges with alternative manufacturers' pre-biased transistor offerings if direct replacements are unavailable.