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The UNR9216J0L is a Silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an SS-Mini3-F1 package (EIAJ SC-89) with three pins: Base, Emitter, and Collector. The device has a maximum collector-emitter voltage of 50 V and a maximum collector current of 100 mA. Total power dissipation is rated at 125 mW. For the UNR9216J variant, the base resistor R1 is 4.7 kΩ. The forward current transfer ratio ranges from 160 to 460 at IC = 5 mA and VCE = 10 V. Transition frequency is 150 MHz.
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm packaging details and availability status. Datasheets indicate potential revisions; ensure the final part number matches the required electrical characteristics and physical dimensions before procurement.
Select this component when a compact NPN switching solution with integrated base resistance is required. Ensure the 4.7 kΩ internal resistance aligns with the driving source impedance and desired saturation levels. Verify thermal constraints as total power dissipation is limited to 125 mW.
This component belongs to the Panasonic UNR921xJ series of transistors with built-in resistors. The series offers various resistor values to suit different digital logic requirements while maintaining a consistent small outline footprint suitable for high-density surface mount assembly.
Consult official substitution lists for equivalent pre-biased NPN transistors in the SC-89 package. Verify that any replacement maintains the 50V VCEO rating, 100mA IC limit, and compatible hFE characteristics for the intended digital load.
The built-in base resistor (R1) for the UNR9216J is 4.7 kΩ.
The maximum collector-emitter voltage (VCEO) is 50 V.
The transition frequency (fT) is 150 MHz.