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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SSMINI3
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：100 kOhms
- Resistor - Emitter Base (R2)：100 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：150 MHz
- Power - Max：125 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-89, SOT-490
- Supplier Device Package：SSMini3-F3
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Overview
The UNR921AG0L is a silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 100 mA. The device dissipates up to 125 mW of power and operates within a junction temperature range of -55 °C to +125 °C. Internal resistance values are fixed at 100 kΩ for both the base resistor (R1) and emitter resistor (R2). The component utilizes an SSMini3-F3 surface-mount package with pin configurations assigned to Base, Emitter, and Collector.
Feature Summary
- Integrates dual bias resistors into a single compact package to reduce component count and board space.
- Utilizes an SSMini3-F3 surface-mount package compatible with automatic insertion via tape packing.
- Complies with the RoHS Directive (EU 2002/95/EC) for environmental standards.
Applications
- Digital logic circuits
- Switching applications
- Driver amplification stages
Procurement Notes
Verify the specific suffix G0L against official Panasonic documentation to confirm internal resistance values and pinout compatibility. Confirm lifecycle status as maintenance or discontinued through official channels before finalizing procurement plans.
Selection Notes
Select this component when a high-impedance input configuration is required, specifically utilizing the 100 kΩ base and emitter resistors. Ensure the 50 V breakdown voltage and 100 mA current limits align with the target circuit requirements.
Part Context
This part belongs to the UNR921xG series of transistors with built-in resistors manufactured by Panasonic Industry. The series offers various resistance combinations tailored for different digital switching needs within a standardized small outline package format.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material.
FAQ
What are the internal resistance values for the UNR921AG0L?
The UNR921AG0L contains a base resistor (R1) of 100 kΩ and an emitter resistor (R2) of 100 kΩ.
What is the marking symbol for this component?
The marking symbol for the UNR921AG0L is 8X.
What is the transition frequency of the UNR921AG0L?
The transition frequency (fT) is specified as 150 MHz under conditions of VCB = 10 V and IE = -2 mA.
