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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SSMINI3
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：100 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：150 MHz
- Power - Max：125 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-89, SOT-490
- Supplier Device Package：SSMini3-F1
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Overview
The UNR921BJ0L is a Silicon NPN epitaxial planar transistor with built-in resistors, designed for digital circuits. It features an SS-Mini3-F1 package (EIAJ: SC-89) with three pins. Key electrical parameters include a collector-emitter voltage of 50 V, a collector current of 100 mA, and total power dissipation of 125 mW. The internal resistance R1 is 100 kΩ. Transition frequency is 150 MHz, and forward current transfer ratio ranges from 160 to 460.
Feature Summary
- Integrates bias resistors to reduce component count and equipment size
- Utilizes SS-Mini type package for automatic insertion via tape packing
Applications
- Digital circuit switching applications
- General electronic equipment such as office machines and household appliances
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation to confirm packaging format and compliance status. Ensure the component meets RoHS requirements if applicable to your design constraints. Cross-reference the marking symbol '8Y' with official datasheets to validate the internal resistor configuration before finalizing procurement specifications.
Selection Notes
Select this component when a compact NPN transistor with integrated base biasing is required for digital logic interfaces. Consider the 100 kΩ internal resistance value for appropriate base drive calculations. Evaluate the 125 mW power dissipation limit against thermal management capabilities in the target application environment.
Part Context
This part belongs to the UNR921xJ Series, which includes various combinations of built-in resistors for different digital switching needs. The series is manufactured by Panasonic Electronic Components and utilizes silicon NPN epitaxial planar technology. It is distinct from other series like UNR921K or UNR9210 due to its specific resistor values and package type.
Replacement Considerations
Consult official substitution lists for equivalent pre-biased transistors with matching 100 kΩ base resistance and 50V rating. Verify pinout compatibility with the SC-89 package before replacement.
FAQ
What is the internal resistance value for the UNR921BJ?
The internal resistance R1 for the UNR921BJ is 100 kΩ.
What is the maximum collector-emitter voltage for this device?
The maximum collector-emitter voltage (VCEO) is 50 V.
Which package type does the UNR921BJ use?
It uses the SS-Mini3-F1 package, also known as EIAJ SC-89.
