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The UNR921MG0L is a Silicon NPN epitaxial planar transistor with built-in resistors, designed for digital circuits. It features an SSMini3-F3 package with Pin 1 as Base, Pin 2 as Emitter, and Pin 3 as Collector. Absolute maximum ratings include a collector-emitter voltage of 50 V, collector current of 100 mA, and total power dissipation of 125 mW at 25°C. The internal configuration includes R1 (2.2 kΩ) and R2 (47 kΩ). Electrical characteristics specify a forward current transfer ratio (hFE) ranging from 80 to 400 at IC = 5 mA and VCE = 10 V. The transition frequency is 150 MHz.
Verify the specific part number against the manufacturer's official lifecycle status page, as maintenance or discontinuation notices may apply. Confirm RoHS compliance documentation matches the required regulatory standards for your region. Ensure the ordering suffix corresponds exactly to the packaging format needed for production assembly.
Select this component when a compact NPN solution with fixed bias ratios is required. The UNR921MG0L provides a specific R1/R2 ratio of 0.047. Verify that the 50 V collector-emitter voltage and 100 mA current limits accommodate the peak operational loads of the target digital circuit design.
This device belongs to the Panasonic UNR921xG series of transistors with built-in resistors. The series offers various resistor combinations tailored for different logic levels. The 'G' suffix indicates the specific SSMini3-F3 package type used for these surface-mount components.
Consult the official Panasonic replacement list for verified substitutes. Cross-reference pinouts and electrical parameters such as hFE ranges and saturation voltages before substituting with other NPN pre-biased transistors.