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The UNR921MJ0L is a silicon NPN epitaxial planar transistor with built-in resistors, designed for digital circuits. It features an SS-Mini3-F1 package (EIAJ SC-89) with three terminals: Base, Emitter, and Collector. The device integrates a base resistor (R1) of 2.2 kΩ and a collector-emitter resistor (R2) of 47 kΩ. Absolute maximum ratings include a collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 100 mA, and a total power dissipation (PT) of 125 mW at 25°C ambient temperature. The transition frequency (fT) is specified at 150 MHz.
Verify the exact ordering suffix against the manufacturer's latest datasheet to ensure correct resistance values and packaging configuration. Confirm availability status as product lifecycles may change. Request the most recent Product Standards document before finalizing design or purchasing decisions to guarantee specification compliance.
Select this component when a compact NPN solution with integrated biasing and pull-down resistors is required. Ensure the 50 V voltage rating and 100 mA current capacity meet circuit demands. Verify that the 2.2 kΩ base and 47 kΩ collector resistances align with the specific logic level requirements of the target application.
This part belongs to the Panasonic UNR921xJ series of transistors with built-in resistors. The series offers various combinations of internal resistances to suit different digital circuit needs. The 'MJ' designation specifically identifies the 2.2 kΩ and 47 kΩ resistor configuration within this family of pre-biased devices.
Consult official substitution lists for compatible parts within the same series or equivalent pre-biased transistors from other manufacturers. Verify pinout compatibility and electrical parameter equivalence before replacement.
The UNR921MJ contains a base resistor (R1) of 2.2 kΩ and a collector-emitter resistor (R2) of 47 kΩ.
The maximum collector-emitter voltage (VCEO) is 50 V.
It uses the SS-Mini3-F1 package, also known as EIAJ SC-89.