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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SSMINI3
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：150 MHz
- Power - Max：125 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-89, SOT-490
- Supplier Device Package：SSMini3-F3
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Overview
The UNR921NG0L is a Silicon NPN epitaxial planar transistor with built-in resistors, designed for digital circuits. It features an SSMini3-F3 package with Pin 1 as Base, Pin 2 as Emitter, and Pin 3 as Collector. Absolute maximum ratings at Ta = 25°C include a collector-base voltage (V_CBO) of 50 V, collector-emitter voltage (V_CEO) of 50 V, collector current (I_C) of 100 mA, total power dissipation (P_T) of 125 mW, junction temperature (T_j) of 125 °C, and storage temperature range of −55 to +125 °C. Electrical characteristics specify a forward current transfer ratio (h_FE) of 80 to 400 at V_CE = 10 V and I_C = 5 mA, and a collector-emitter saturation voltage (V_CE(sat)) of 0.25 V max at I_C = 10 mA and I_B = 0.3 mA.
Feature Summary
- Integrates bias resistors directly onto the silicon chip to reduce component count and equipment size.
- Utilizes an SSMini type package compatible with automatic insertion via tape packing.
Applications
- Digital circuit switching applications
- Driver circuits requiring integrated base resistance
Procurement Notes
Verify the specific part number against official Panasonic documentation to confirm availability status. The datasheet indicates that certain lifecycle stages, including planned maintenance or discontinuation, may apply. Consult the manufacturer's official website for the most current product status before finalizing procurement plans.
Selection Notes
Select this component when a compact NPN transistor with pre-defined internal biasing is required for digital logic interfaces. Ensure the internal resistor values (R1: 4.7 kΩ, R2: 47 kΩ) match the circuit design requirements. Verify that the 50 V voltage rating and 100 mA current capacity are sufficient for the intended load conditions.
Part Context
This device belongs to the UNR921xG Series, which comprises various NPN transistors with built-in resistors. The series offers multiple resistor configurations to suit different digital driving needs while maintaining a consistent small outline package form factor for automated assembly processes.
Replacement Considerations
Cross-reference with other UNR921xG variants if different internal resistor ratios are needed. Verify pinout compatibility and electrical limits before substituting with generic NPN transistors plus external resistors.
