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The UNRF1A300A is a silicon PNP epitaxial planar transistor with built-in resistors, designed for digital circuits. It features an ML3-N2 leadless package measuring 0.6 mm x 1.0 mm with a height of 0.39 mm. The device supports a collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of -80 mA. Internal resistors R1 and R2 are both 47 kΩ, with a resistance ratio (R1/R2) ranging from 0.8 to 1.2. Key electrical parameters include a forward current transfer ratio (hFE) of 80 at IC = -5 mA and VCE = -10 V, a transition frequency (fT) of 150 MHz, and a maximum total power dissipation (PT) of 100 mW.
Verify the specific lifecycle status before procurement, as this component may be classified under maintenance or discontinued categories. Confirm that the latest Panasonic Industry Product Standards match your design requirements, as specifications are subject to change without notice. Ensure compliance with RoHS directives if applicable to your manufacturing region.
Select this component when space constraints require a compact solution combining a PNP transistor with base and emitter resistors. Ensure the operating voltage does not exceed -50 V and the current remains within -80 mA. Consider the thermal limitations, as the total power dissipation is capped at 100 mW, requiring adequate heat management in dense assemblies.
This part belongs to the UNRF1A3 series of transistors with built-in resistors manufactured by Panasonic Industry. These components are specifically engineered for downsizing equipment through high-density mounting. The ML3-N2 package provides a small footprint while maintaining reliable performance for standard digital applications.
Check Panasonic's official database for direct replacements or updated series members. Verify pinout compatibility and electrical parameter equivalence, particularly VCEO, IC, and internal resistor values, before substituting any alternative component.