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The UNRF2A100A is a silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an ultraminiature leadless ML3-N2 package measuring 0.6 mm x 1.0 mm with a height of 0.39 mm. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 80 mA, and total power dissipation (PT) of 100 mW at 25°C. The internal configuration consists of two 10 kΩ resistors with a ratio of R1/R2 equal to 1.0. The device operates within a junction temperature range up to 125°C and complies with the RoHS Directive.
Verify the specific ordering suffix against official Panasonic documentation to confirm exact packaging and marking details. Confirm availability status as lifecycle stages may change. Ensure compliance with export control regulations if applicable. Consult manufacturer specifications for final design validation before mass production.
Select this component when space constraints require a compact footprint under 1 mm in height. The integrated resistor network eliminates external biasing components, reducing board area and assembly costs. Verify that the 50 V rating and 80 mA current capacity meet the specific load requirements of the target digital application.
This part belongs to the UNRF series of transistors with built-in resistors manufactured by Panasonic Electronic Components. The series utilizes a standardized ML3-N2 surface-mount package to facilitate automated pick-and-place processes. It serves as a direct replacement for discrete transistor and resistor combinations in standard digital logic environments.
Public confirmed substitute part numbers are not available in the provided source material.