UNRF2A700A

Overview

The Panasonic UNRF2A7 is a silicon NPN epitaxial planar transistor with an integrated base resistor, designed for digital circuits. It features an ultraminiature leadless ML3-N2 package measuring 0.6 mm x 1.0 mm with a height of 0.39 mm. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 80 mA, and a total power dissipation (PT) of 100 mW at 25°C. The internal bias resistor (R1) has a nominal value of 22 kΩ with a tolerance of ±30%. The device exhibits a forward current transfer ratio (hFE) ranging from 160 to 460 at IC = 5 mA and VCE = 10 V.

Feature Summary

• Ultraminiature leadless package suitable for high-density mounting and equipment downsizing
• Integrated base resistor simplifies circuit design for digital applications
• High forward current transfer ratio ensures efficient switching performance

Applications

• Digital logic circuits
• General electronic equipment
• Office equipment
• Communications equipment

Procurement Notes

Verify the specific lifecycle status before procurement, as the datasheet indicates maintenance or discontinuation stages may apply. Confirm that the ML3-N2 package dimensions align with the target PCB footprint. Ensure compliance with RoHS directives if required by the end application. Consult official channels for the most up-to-date product standards and availability information prior to finalizing orders.

Selection Notes

Select this component when space constraints require an ultraminiature footprint under 1 mm in length. The built-in 22 kΩ resistor eliminates external biasing components, reducing board area. Verify that the 50 V collector-emitter voltage rating meets the system's maximum operating voltage. Consider the 100 mW power dissipation limit and derating curves for thermal management in enclosed environments.

Part Context

The UNRF2A7 belongs to Panasonic's series of transistors with built-in resistors, specifically engineered for compact digital switching applications. It shares the ML3-N2 package form factor with other variants in the family but differs in internal resistance values and gain characteristics. This component serves as a direct replacement for discrete transistor-resistor combinations where size reduction is critical.

Replacement Considerations

Check for exact pinout compatibility with existing designs. Verify that substitute devices offer equivalent hFE ranges and saturation voltages. Ensure the replacement part supports the same leadless package type to maintain mechanical fit.