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The Panasonic UP04979 is a composite transistor featuring an N-channel MOSFET (Tr1) and a P-channel MOSFET (Tr2) in a single SSMini6-F1 package. Tr1 supports a drain-source voltage of 50V, while Tr2 handles -30V. Both devices operate with a maximum drain current of ±100mA and total power dissipation of 125mW. The unit includes built-in gate protection diodes and utilizes a marking symbol '4T'. It complies with the RoHS Directive and is designed for high-speed switching applications.
Verify component status before design finalization. This product is classified as Maintenance/Discontinued. Consult official manufacturer channels for lifecycle updates and latest specifications to ensure compliance with current requirements.
Select this component for designs requiring compact dual-MOSFET solutions. Ensure operating conditions remain within absolute maximum ratings. Verify thermal management for the 125mW dissipation limit. Confirm suitability for standard applications only.
This part replaces the discrete combination of 2SJ0672 and 2SK3539 transistors. It reduces mounting area and assembly costs by integrating two separated transistors into one package. The device is manufactured by Panasonic Industrial Devices.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs if considering alternative components.
The marking symbol is 4T.
Yes, it features built-in gate protection diodes.
It uses the JEDEC SOD-723 SSMini6-F1 package.