UPA1476H-AZ

Overview

The UPA1476H-AZ is a power bipolar transistor array manufactured by Renesas Electronics Corporation. It integrates four NPN Darlington circuits within a single package, designed for high-current switching applications. The device supports a maximum collector-emitter voltage of 115V and a continuous collector current of 2A per channel. With a total power dissipation rating of 3.5W, it is suitable for driving loads such as solenoids and relays. The component utilizes a 10-SIP through-hole carrier type, ensuring robust mechanical stability for industrial environments.

Feature Summary

• Integrates four independent NPN Darlington transistor circuits in a single unit
• Engineered for direct driving of inductive loads like solenoids and relays
• Provides high current gain characteristics typical of Darlington configurations
• Constructed with silicon epitaxial technology for reliable power handling

Applications

• Solenoid driver circuits
• Relay control modules
• Industrial automation switching systems
• Motor interface circuits

Procurement Notes

Verify the exact package designation matches the 10-SIP form factor required for your PCB layout. Confirm that the thermal management strategy accommodates the 3.5W power dissipation limit under worst-case operating conditions. Ensure the supply voltage does not exceed the 115V rating to prevent junction breakdown. Cross-reference the specific suffix 'AZ' with the manufacturer's latest documentation to confirm compliance with current environmental standards and material declarations before finalizing procurement.

Selection Notes

Select this component when a compact solution for multiple low-to-medium power switching tasks is required. The Darlington configuration offers high input impedance, simplifying drive circuitry from microcontrollers or logic gates. Consider the 115V voltage rating for medium-voltage AC or DC loads. Evaluate the 2A current capacity against peak load requirements. The through-hole SIP package is advantageous for prototyping or applications requiring higher mechanical durability compared to surface-mount alternatives.

Part Context

This part belongs to Renesas' discrete semiconductor portfolio, specifically within the power bipolar transistor category. It serves as a building block for power electronics, replacing multiple individual transistors to save board space. The Darlington architecture provides significant current amplification, making it distinct from standard single-transistor switches. It complements other Renesas components in motor control and industrial power distribution systems.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. When seeking replacements, ensure the alternative matches the 115V Vceo, 2A Ic, and 10-SIP package dimensions. Verify that any substitute also features a quad Darlington configuration to maintain circuit functionality without redesigning the driver stage.