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The UPA1763G-E1-A is a dual N-channel power MOSFET from Renesas Electronics, designed for automotive applications. It features an 8-PSOP package with dimensions of 5 x 4 x 1.8 mm. The device has a maximum on-resistance (RDS(ON)) of 47 mΩ at 10V and a typical gate charge (Qg) of 20 nC. It supports a drain-to-source voltage of 60V and operates within an industrial qualification level.
Verify the specific suffix (e.g., -E1-A vs -E1-AT) to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets the required industrial qualification level for your application environment. Cross-reference the pinout and package dimensions (5x4x1.8mm) with your PCB layout requirements to ensure mechanical compatibility.
Select this component when a dual N-channel MOSFET with low on-resistance and logic-level gate drive is required. Consider the 60V Vdss rating and 47mΩ RDS(ON) for efficiency needs. Ensure the 8-PSOP package fits the available board space and thermal constraints for the target automotive or industrial design.
This part belongs to Renesas' automotive power MOSFET portfolio, emphasizing reliability and performance in vehicle electronics. It complements other discrete power devices used in motor drives and power distribution systems within automotive architectures.
Check for direct substitutes like the UPA1763G(0)-E1-AY if available, ensuring identical electrical parameters and package dimensions. Verify that any replacement maintains the same automotive qualification level and dual N-channel configuration.