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Product Detailed Parameters
- Description：TRANS 7NPN DARL 60V 500MA 16DIP
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Transistor Type：7 NPN Darlington
- Current - Collector (Ic) (Max)：500mA
- Voltage - Collector Emitter Breakdown (Max)：60V
- Vce Saturation (Max) @ Ib, Ic：1.6V @ 500µA, 350mA
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：1000 @ 350mA, 2V
- Power - Max：900mW
- Frequency - Transition：-
- Operating Temperature：-30°C ~ 75°C
- Mounting Type：Through Hole
- Package / Case：16-DIP (0.300", 7.62mm)
- Supplier Device Package：16-DIP
- Grade：-
- Qualification：-
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Overview
The UPA2001C-A is a monolithic N-channel enhancement mode MOSFET manufactured by Renesas Electronics Corporation. Designed for high-speed switching applications, this component features low on-resistance and fast switching characteristics suitable for power management circuits. The device utilizes advanced silicon gate technology to ensure robust performance under varying thermal conditions. It is housed in a compact surface-mount package optimized for automated assembly processes.
Feature Summary
- Monolithic construction utilizing advanced silicon gate technology
- Optimized for high-speed switching operations
- Low on-resistance for efficient power handling
Applications
- DC-DC converter modules
- Power supply unit output stages
- Motor control circuitry
Procurement Notes
Verify the specific ordering code against the official Renesas datasheet to ensure compatibility with required voltage and current ratings. Confirm that the package marking matches the intended design specifications. Check for any recent updates to the product lifecycle status or recommended replacement components before finalizing procurement plans.
Selection Notes
Evaluate the maximum drain-source voltage and continuous drain current requirements of the target application against the device specifications. Consider thermal dissipation capabilities and junction temperature limits during operation. Ensure the switching speed aligns with the system's frequency requirements to minimize losses.
Part Context
This component belongs to Renesas' discrete power transistor portfolio, focusing on efficiency and reliability. It serves as a critical switching element in modern electronic systems where space constraints and thermal management are primary design drivers. The part integrates protection features inherent to its silicon structure.
Replacement Considerations
Consult the official Renesas replacement guide for direct substitutes. Verify pin compatibility and electrical parameters before integrating alternative parts into existing designs.
