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Product Detailed Parameters
- Description：DARLINGTON TRANSISTOR ARRAY
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The UPA2002GR-E1-A is a Bipolar Junction Transistor (BJT) array manufactured by Renesas Electronics Corporation. It is classified as a Darlington transistor array, designed for applications requiring high current gain and switching capabilities. The component utilizes a Quarktwin package configuration, which integrates multiple transistors into a single compact unit to save board space. This device serves as an active electronic component suitable for general-purpose amplification and switching tasks in various electronic circuits.
Feature Summary
- Integrates multiple Darlington pairs within a single compact package to maximize circuit density.
- Provides high current gain characteristics suitable for driving loads with minimal input drive current.
- Utilizes the Quarktwin form factor to reduce footprint compared to discrete transistor solutions.
Applications
- General-purpose signal amplification
- Low-power switching circuits
- Interface drivers for logic-to-load conversion
Procurement Notes
Verify the exact datasheet revision and RoHS compliance status directly from Renesas official documentation before integration. Confirm that the Quarktwin package dimensions match your PCB layout constraints. Ensure that thermal management requirements are addressed according to the manufacturer's specified operating temperature ranges and power dissipation limits for this specific part number.
Selection Notes
Select this component when a compact solution for high-gain switching or amplification is required. The Darlington configuration offers significant advantage in low-drive scenarios where base current must be minimized. Consider the Quarktwin package benefits for space-constrained designs needing multiple matched transistor pairs without the complexity of discrete assembly.
Part Context
This part belongs to Renesas' portfolio of bipolar transistor arrays. It complements other discrete and integrated components used in control and power management circuits. As a BJT array, it fits within the broader category of passive and active semiconductor devices essential for building complex electronic systems requiring reliable signal processing and power switching functions.
Replacement Considerations
Consult official Renesas cross-reference tools for verified substitutes. Ensure any replacement maintains the Darlington topology and Quarktwin package compatibility. Verify that electrical parameters such as voltage ratings and current gains meet or exceed original specifications for direct interchangeability.
FAQ
What type of transistor configuration does the UPA2002GR-E1-A use?
It uses a Darlington transistor array configuration, providing high current gain.
What is the package style of this component?
The component is housed in a Quarktwin package, which is a multi-transistor surface-mount format.
