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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 4A/3A 6HUSON
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4A, 3A
- Rds On (Max) @ Id, Vgs：42mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：4.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：330pF @ 10V
- Power - Max：2.3W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-WFDFN Exposed Pad
- Supplier Device Package：6-HUSON (2x2)
- Grade：-
- Qualification：-
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Overview
The UPA2690T1R-E2-AX is a dual power MOSFET array from Renesas Electronics, featuring complementary N-channel and P-channel configurations in a compact 6-WFDFN exposed pad package. It supports low-voltage switching applications with an N-channel RDS(on) of 42 mΩ MAX at VGS = 4.5 V and ID = 2.0 A, and a P-channel RDS(on) of 62 mΩ MAX. The device operates with a 2.5V drive for the N-channel and 1.8V drive for the P-channel, ensuring efficient performance in space-constrained designs.
Feature Summary
- Complementary N-channel and P-channel configuration for versatile switching needs
- Low on-state resistance to minimize power loss and heat generation
- Compatible with low voltage logic levels for easy interface integration
Applications
- Industrial control systems requiring compact power switching
- Consumer electronics with limited board space constraints
- Battery-powered devices needing efficient power management
Procurement Notes
Verify the specific suffix E2-AX against the official Renesas datasheet to confirm package type and moisture sensitivity level. Ensure compatibility with surface mount assembly processes due to the exposed pad design. Check for end-of-life notifications or discontinuance alerts prior to finalizing procurement plans.
Selection Notes
Select this component when a small footprint dual MOSFET solution is required for low-voltage applications. Consider the thermal performance of the exposed pad package for heat dissipation requirements. Evaluate the drive voltage compatibility with the system's logic levels to ensure reliable switching operation.
Part Context
This part belongs to Renesas' lineup of discrete power semiconductors designed for efficiency and miniaturization. It complements other MOSFET arrays by offering a balanced N/P-channel pair in a single package, simplifying bill of materials and layout complexity for designers.
Replacement Considerations
Check for direct pin-to-pin replacements within the same Renesas family that may offer updated packaging or enhanced thermal characteristics. Verify electrical parameters such as RDS(on) and breakdown voltage to ensure functional equivalence in existing designs.
