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The UPA801T-T1-A is a twin NPN silicon bipolar transistor manufactured by CEL. It integrates two NE856 transistors within a single SOT-363 package. The device operates with a maximum collector-emitter voltage of 12 V and a continuous collector current of 100 mA per section. At a test frequency of 1 GHz, the typical transition frequency (fT) is 4.5 GHz. Electrical characteristics at 3 V and 7 mA include a noise figure of 1.2 dB, a gain of 14.0 dB, and an hFE of 120.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm pinout compatibility and electrical tolerances. Confirm RoHS compliance status directly with the supplier or through certified datasheets prior to integration into production designs.
Select this component when a dual NPN configuration is required for balanced circuit topologies. Ensure the operating frequency aligns with the specified fT performance. Verify that the thermal dissipation requirements are met by the SOT-363 package constraints for the intended application load.
This part belongs to the UPA series of twin silicon bipolar transistors from CEL. These devices are designed to replace discrete dual-transistor setups, reducing board space and improving matching consistency between paired components in RF signal paths.
UPA810T-T1-A
It contains two independent NPN silicon bipolar transistors based on the NE856 die, housed in a single SOT-363 package.
The typical noise figure is 1.2 dB when biased at 3 V and 7 mA.
The maximum continuous collector current is 100 mA.