UPA801T-T1-A

UPA801T-T1-A

  • Description:RF TRANS 2 NPN 12V 4.5GHZ SOT363
  • Series:-

SKU:b4c6f6688f2d Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS 2 NPN 12V 4.5GHZ SOT363
  • Series:-
  • Mfr:CEL
  • Package:Tape & Reel (TR)
  • Transistor Type:2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:4.5GHz
  • Noise Figure (dB Typ @ f):1.2dB @ 1GHz
  • Gain:9dB
  • Power - Max:200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 7mA, 3V
  • Current - Collector (Ic) (Max):100mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363
  • Grade:-
  • Qualification:-

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UPA801T-T1-A

Overview

The UPA801T-T1-A is a twin NPN silicon bipolar transistor manufactured by CEL. It integrates two NE856 transistors within a single SOT-363 package. The device operates with a maximum collector-emitter voltage of 12 V and a continuous collector current of 100 mA per section. At a test frequency of 1 GHz, the typical transition frequency (fT) is 4.5 GHz. Electrical characteristics at 3 V and 7 mA include a noise figure of 1.2 dB, a gain of 14.0 dB, and an hFE of 120.

Feature Summary

  • Dual NPN configuration integrating two matched transistors in a compact surface-mount package
  • Optimized for low-noise amplification applications in the VHF and UHF bands
  • High transition frequency capability supporting high-frequency signal processing

Applications

  • Low Noise Amplifiers (LNAs)
  • VHF/UHF RF circuits
  • Wireless communication front ends

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm pinout compatibility and electrical tolerances. Confirm RoHS compliance status directly with the supplier or through certified datasheets prior to integration into production designs.

Selection Notes

Select this component when a dual NPN configuration is required for balanced circuit topologies. Ensure the operating frequency aligns with the specified fT performance. Verify that the thermal dissipation requirements are met by the SOT-363 package constraints for the intended application load.

Part Context

This part belongs to the UPA series of twin silicon bipolar transistors from CEL. These devices are designed to replace discrete dual-transistor setups, reducing board space and improving matching consistency between paired components in RF signal paths.

Replacement Considerations

UPA810T-T1-A

FAQ

What is the internal structure of the UPA801T-T1-A?

It contains two independent NPN silicon bipolar transistors based on the NE856 die, housed in a single SOT-363 package.

What is the typical noise figure at 1 GHz?

The typical noise figure is 1.2 dB when biased at 3 V and 7 mA.

What is the maximum collector current rating?

The maximum continuous collector current is 100 mA.

UPA801T-T1-AUPA801T-T1-A

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