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Product Detailed Parameters
- Description：RF TRANS 2 NPN 10V 7GHZ SOT-363
- Series：-
- Mfr：CEL
- Package：Tape & Reel (TR)
- Transistor Type：2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max)：10V
- Frequency - Transition：7GHz
- Noise Figure (dB Typ @ f)：1.4dB @ 1GHz
- Gain：12dB
- Power - Max：200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 7mA, 3V
- Current - Collector (Ic) (Max)：65mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The UPA802T-T1-A is a dual NPN silicon bipolar transistor designed for RF applications up to 1 GHz. It integrates two NE681 transistors in a single SOT-363 package. Key electrical characteristics include a typical transition frequency (fT) of 7.0 GHz at 1 GHz test frequency, a maximum collector current (Ic) of 65 mA, and a maximum collector-emitter voltage (VCE) of 10 V. The device operates with a typical DC current gain (hFE) of 120 at 7 mA and features a noise figure of 1.4 dB.
Feature Summary
- Dual NPN configuration integrating two matched transistors within a compact surface-mount package.
- Optimized for low-noise amplification and signal processing in ultra-high frequency bands.
Applications
- Low Noise Amplifiers (LNAs)
- RF Signal Processing
- Ultra High Frequency Circuits
Procurement Notes
Verify the specific manufacturer source and datasheet revision before procurement. Confirm that the component meets all required environmental standards and RoHS compliance specifications for the intended application environment.
Selection Notes
Select this component when a dual NPN configuration is required for high-frequency signal paths. Ensure the design accommodates the 10 V maximum collector-emitter voltage and 65 mA continuous current limits while maintaining thermal stability within the specified operating temperature range.
Part Context
This part belongs to the CEL Silicon Bipolar Transistor family, specifically the Twin Transistors category. It serves as an integrated solution for designs requiring multiple active devices, replacing discrete components to save board space and improve matching consistency in RF front-end modules.
Replacement Considerations
The UPA802T is electrically equivalent to the UPA812T. Designers should verify pinout compatibility and package dimensions when substituting between these twin transistor variants.
FAQ
What is the typical transition frequency (fT) for the UPA802T?
The typical transition frequency is 7.0 GHz, measured at a test frequency of 1 GHz.
How many transistors are contained in the UPA802T-T1-A package?
The package contains two NPN transistors, internally matched and designated as NE681.
What is the maximum collector current rating for this device?
The maximum continuous collector current (Ic) is rated at 65 mA.
