UPA806T-T1

Overview

The UPA806T-T1 is a dual NPN high-frequency silicon epitaxial transistor manufactured by CEL. It integrates two NE685 dies within an ultra-small 2 mm x 1.25 mm S06 package. The device features a gain bandwidth product (fT) of 12 GHz and a typical noise figure of 1.5 dB at 2 GHz. Electrical characteristics include a collector current rating of 30 mA, a collector-to-emitter voltage of 6 V, and a forward current gain ranging from 75 to 150. The component is supplied in tape and reel packaging with a quantity of 3000 units per reel.

Feature Summary

• Dual independent NPN transistors housed in an ultra-compact surface-mount package
• High gain bandwidth product suitable for RF applications up to 3 GHz
• Low noise figure performance optimized for wireless signal processing
• Capable of cascode or dual transistor configurations

Applications

• Hand-held wireless communication devices
• RF amplifier stages in portable electronics
• Cascode circuit implementations requiring low voltage bias

Procurement Notes

Verify the specific ordering suffix when sourcing components. The base part number UPA806T refers to the standard configuration, while the -T1 suffix indicates tape and reel packaging containing 3000 units. Confirm that the received inventory matches the required packaging format for automated assembly processes before integration into production lines.

Selection Notes

Select this component for designs requiring dual matched transistors in minimal board space. Ensure the operating frequency remains within the verified 0.1 to 3.0 GHz range for accurate model prediction. Verify that the bias conditions stay within the specified collector current and voltage limits to maintain stability and prevent thermal damage during continuous operation.

Part Context

This component belongs to the UPA806T series of high-frequency bipolar transistors produced by California Eastern Laboratories. It utilizes the NE685 die technology encapsulated in a specialized S06 outline. The series is designed specifically for mobile phone and handheld radio applications where size constraints and RF performance are critical design parameters.

Replacement Considerations

No direct public substitute part numbers are documented in the provided datasheet. Designers should evaluate alternative dual NPN RF transistors based on matching fT, noise figure, and package dimensions if replacement is necessary.