UPD48576218FF-E33-DW1-A

Overview

The UPD48576218FF-E33-DW1-A is a 576-Mbit Low Latency DRAM featuring Common I/O architecture. It operates with a data width of 18 bits and an organization of 32M x 18. The device supports DDR interface speeds with a typical access time of 0.35 ns. It functions within a voltage range of 1.14 V to 3.6 V and is compliant with RoHS3 standards.

Feature Summary

• Implements low latency DRAM technology for high-speed data processing
• Utilizes Common I/O architecture to optimize pin count and signal integrity
• Supports DDR interface protocols for efficient bandwidth utilization

Applications

• High-performance embedded memory systems
• Industrial control applications requiring fast data access
• Automotive electronic modules

Procurement Notes

Verify the specific suffix (E33) against the required operating voltage and temperature grade. Confirm package type matches the design footprint. Check RoHS3 compliance status if environmental regulations apply. Ensure the source document explicitly lists this part number as active or obsolete before ordering.

Selection Notes

Select this component when a 576-Mbit capacity with 18-bit width is required. The Common I/O feature reduces board space compared to traditional parallel interfaces. Verify that the system power supply can support the 1.14 V to 3.6 V operating range. Consider thermal management for the BGA-324 package in dense assemblies.

Part Context

This part belongs to Renesas' low latency DRAM family, designed for applications demanding rapid data retrieval. It complements microprocessors by providing high-bandwidth storage. The Common I/O design distinguishes it from standard parallel DRAMs by sharing address and data lines.

Replacement Considerations

Check for direct substitutes with identical 32M x 18 organization and Common I/O interface. Verify compatibility with existing controller logic. Ensure replacement parts maintain the same voltage and timing specifications.