US6J12TCR

Overview

The US6J12TCR is a dual P-channel small signal MOSFET manufactured by ROHM Semiconductor. It features a TUMT6 surface mount package and utilizes silicon technology. Key electrical parameters include a drain-source voltage of -12V, continuous drain current of 2A, and on-resistance of 910mOhms at Vgs=4.5V. The device supports a gate-source voltage of ±20V with a threshold voltage of 1V. Total gate charge is 3nC, with rise and fall times of 10ns and 9ns respectively. Power dissipation is 910mW in free air, operating within a temperature range of -55°C to +150°C.

Feature Summary

• Low on-resistance for efficient switching performance
• Built-in gate-source protection diode
• Compact surface mount TUMT6 package design

Applications

• Switching applications
• Small signal processing circuits
• Power management modules

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel quantity. Confirm RoHS compliance status through official documentation. Ensure the TUMT6 package dimensions align with PCB footprint requirements. Check for end-of-life notifications or alternative part recommendations from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component for low-voltage switching tasks requiring dual P-channel configuration. Consider the 910mOhm on-resistance for thermal management in compact designs. Evaluate the 2A current rating against load requirements. The TUMT6 package suits space-constrained surface mount assemblies.

Part Context

This part belongs to ROHM's discrete semiconductor portfolio, specifically within the MOSFET category. It complements other small signal transistors designed for automotive and industrial electronics. The product line emphasizes reliability and efficiency in power management solutions.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult official ROHM resources for cross-reference data.