US6T8TR

US6T8TR

$0.81
  • Description:TRANS 2PNP DUAL 12V 1.5A TUMT6
  • Series:-

SKU:9975e58de6b8 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP DUAL 12V 1.5A TUMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP (Dual)
  • Current - Collector (Ic) (Max):1.5A
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Vce Saturation (Max) @ Ib, Ic:200mV @ 25mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:270 @ 200mA, 2V
  • Power - Max:400mW
  • Frequency - Transition:400MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD, Flat Leads
  • Supplier Device Package:TUMT6
  • Grade:-
  • Qualification:-

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US6T8TR

Overview

The US6T8TR is a dual PNP bipolar junction transistor manufactured by ROHM Semiconductor, housed in the SOT-363T (TUMT6) surface-mount package. It features a collector-emitter voltage of -12V and a continuous collector current of -1.5A. The device exhibits a low collector saturation voltage of -200mV at -500mA collector current and -25mA base current. Key electrical parameters include a maximum power dissipation of 400mW, a DC current gain (hFE) range of 270 to 680 at -100mA/-2V, and a transition frequency of 320MHz. It operates within a junction temperature range up to +150°C.

Feature Summary

  • Designed for general-purpose amplification applications with high collector current capability.
  • Features low collector saturation voltage to enhance switching efficiency.
  • Compact SOT-363T surface-mount package suitable for space-constrained designs.

Applications

  • Low-frequency amplifier circuits
  • General-purpose driver stages

Procurement Notes

Verify the specific suffix TR indicates tape-and-reel packaging when ordering. Confirm RoHS compliance status through official datasheets or manufacturer declarations prior to integration. Ensure component authenticity by sourcing from authorized distributors and validating part markings against official specifications.

Selection Notes

Select this component for applications requiring dual PNP transistors with moderate current handling and low saturation voltage. Compare hFE ranges and VCE(sat) limits against circuit requirements. Consider thermal management due to 400mW power dissipation in the small SOT-363T package.

Part Context

The US6T8TR belongs to ROHM's US6T series of dual PNP bipolar transistors. This series is engineered for compact, high-performance analog and switching applications. The TUMT6 package code corresponds to the industry-standard SOT-363T form factor, facilitating automated assembly.

Replacement Considerations

Check for direct pin-compatible alternatives within the same ROHM US6T family or other manufacturers offering dual PNP transistors in SOT-363T packages with matching -12V/VCEO and -1.5A/IC ratings.

US6T8TRUS6T8TR
$0.81
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