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The US6T8TR is a dual PNP bipolar junction transistor manufactured by ROHM Semiconductor, housed in the SOT-363T (TUMT6) surface-mount package. It features a collector-emitter voltage of -12V and a continuous collector current of -1.5A. The device exhibits a low collector saturation voltage of -200mV at -500mA collector current and -25mA base current. Key electrical parameters include a maximum power dissipation of 400mW, a DC current gain (hFE) range of 270 to 680 at -100mA/-2V, and a transition frequency of 320MHz. It operates within a junction temperature range up to +150°C.
Verify the specific suffix TR indicates tape-and-reel packaging when ordering. Confirm RoHS compliance status through official datasheets or manufacturer declarations prior to integration. Ensure component authenticity by sourcing from authorized distributors and validating part markings against official specifications.
Select this component for applications requiring dual PNP transistors with moderate current handling and low saturation voltage. Compare hFE ranges and VCE(sat) limits against circuit requirements. Consider thermal management due to 400mW power dissipation in the small SOT-363T package.
The US6T8TR belongs to ROHM's US6T series of dual PNP bipolar transistors. This series is engineered for compact, high-performance analog and switching applications. The TUMT6 package code corresponds to the industry-standard SOT-363T form factor, facilitating automated assembly.
Check for direct pin-compatible alternatives within the same ROHM US6T family or other manufacturers offering dual PNP transistors in SOT-363T packages with matching -12V/VCEO and -1.5A/IC ratings.