US6X7TR

US6X7TR

$0.81
  • Description:TRANS 2NPN DUAL 12V 1.5A TUMT6
  • Series:-

SKU:43400c125bda Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN DUAL 12V 1.5A TUMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):1.5A
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Vce Saturation (Max) @ Ib, Ic:200mV @ 25mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:270 @ 200mA, 2V
  • Power - Max:400mW
  • Frequency - Transition:400MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD, Flat Leads
  • Supplier Device Package:TUMT6
  • Grade:-
  • Qualification:-

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US6X7TR

Overview

The US6X7TR is a dual NPN bipolar junction transistor array manufactured by ROHM Semiconductor. It features a collector-emitter voltage (VCEO) of 12 V and a continuous collector current rating of 1.5 A. The device is housed in a surface-mount SOT-363T package, also designated as TUMT6. Key electrical specifications include a power dissipation of 400 mW, a gain bandwidth product (fT) of 400 MHz, and a collector-emitter saturation voltage of 200 mV. The maximum operating temperature is +150°C.

Feature Summary

  • Dual NPN configuration within a compact surface-mount package
  • High-speed operation with a 400 MHz transition frequency
  • Low saturation voltage for efficient switching performance

Applications

  • General-purpose driver circuits
  • Logic interface applications
  • Switching circuits in consumer electronics

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with ROHM Semiconductor or authorized distributors before integration. Confirm that the SOT-363T package dimensions align with the target PCB footprint. Ensure thermal management strategies account for the 400 mW power dissipation limit under actual operating conditions to maintain reliability within the specified temperature range.

Selection Notes

Select this component when a dual NPN configuration is required in a small form factor. The 12 V rating suits low-voltage logic systems, while the 1.5 A current capability supports moderate load driving. Consider the 400 MHz speed for high-frequency switching needs. Compare against single-transistor solutions if space allows, but prioritize this part for integrated dual-channel requirements.

Part Context

This part belongs to ROHM's series of dual bipolar transistor arrays designed for space-constrained applications. The US6X7TR complements other variants like the US6X8TR, differing primarily in voltage ratings. These arrays are intended to replace discrete dual-transistor setups, reducing board area and simplifying assembly processes in modern electronic designs.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters carefully if considering alternative manufacturers' dual NPN transistors.

US6X7TRUS6X7TR
$0.81
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