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The US6X7TR is a dual NPN bipolar junction transistor array manufactured by ROHM Semiconductor. It features a collector-emitter voltage (VCEO) of 12 V and a continuous collector current rating of 1.5 A. The device is housed in a surface-mount SOT-363T package, also designated as TUMT6. Key electrical specifications include a power dissipation of 400 mW, a gain bandwidth product (fT) of 400 MHz, and a collector-emitter saturation voltage of 200 mV. The maximum operating temperature is +150°C.
Verify the specific datasheet revision and RoHS compliance status directly with ROHM Semiconductor or authorized distributors before integration. Confirm that the SOT-363T package dimensions align with the target PCB footprint. Ensure thermal management strategies account for the 400 mW power dissipation limit under actual operating conditions to maintain reliability within the specified temperature range.
Select this component when a dual NPN configuration is required in a small form factor. The 12 V rating suits low-voltage logic systems, while the 1.5 A current capability supports moderate load driving. Consider the 400 MHz speed for high-frequency switching needs. Compare against single-transistor solutions if space allows, but prioritize this part for integrated dual-channel requirements.
This part belongs to ROHM's series of dual bipolar transistor arrays designed for space-constrained applications. The US6X7TR complements other variants like the US6X8TR, differing primarily in voltage ratings. These arrays are intended to replace discrete dual-transistor setups, reducing board area and simplifying assembly processes in modern electronic designs.
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters carefully if considering alternative manufacturers' dual NPN transistors.