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Product Detailed Parameters
- Description：MOSFET 2P-CH 100V 1A HUML2020L8
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：1A (Ta)
- Rds On (Max) @ Id, Vgs：840mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：6.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：90pF @ 50V
- Power - Max：2W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-PowerUDFN
- Supplier Device Package：HUML2020L8
- Grade：-
- Qualification：-
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Overview
The UT6JE5TCR is a dual P-channel power MOSFET manufactured by ROHM Semiconductor. It features a DFN2020-8D surface-mount package and operates with a drain-source voltage of -100 V and a continuous drain current of ±1.0 A. The device exhibits a maximum static drain-source on-state resistance of 840 mΩ at VGS = -10V and ID = -1A. Total gate charge is specified at 6.7 nC under standard test conditions. Power dissipation reaches 2.0 W, supported by a thermal resistance junction-to-ambient of 62.5 °C/W. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Dual P-channel configuration in a compact surface-mount package
- Low on-resistance for efficient switching performance
- RoHS compliant and halogen-free construction
Applications
- General-purpose electronic equipment
- Audio/visual equipment
- Office automation devices
- Telecommunication equipment
- Home electronic appliances
Procurement Notes
Verify the specific ordering suffix TCR to confirm reel packaging specifications. Ensure compatibility with embossed tape dimensions and taping codes before procurement. Confirm RoHS compliance status through official manufacturer documentation. Validate marking JE5 against physical component inspection upon receipt.
Selection Notes
Select this component for applications requiring high-voltage P-channel switching within limited board space. Evaluate thermal derating curves for ambient temperature constraints. Consider the 840 mΩ on-resistance for power loss calculations. Verify gate drive voltage levels against the -10V and -4.5V threshold requirements for optimal conduction.
Part Context
This part belongs to the UT6JE5 series of dual P-channel power MOSFETs. It shares the DFN2020-8D footprint with other variants in the family but differs in voltage and current ratings. The series targets general consumer electronics where small form factors are critical.
Replacement Considerations
Direct substitutes must match the -100V rating, dual P-channel topology, and DFN2020-8D package. Verify on-resistance and gate charge parameters to ensure equivalent switching performance.
