UT6KC5TCR

$2.00

Description：MOSFET 2N-CH 60V 3.5A 8DFN
Series：-

SKU:358cd5fc24d6 Category: FET, MOSFET Arrays Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 3.5A 8DFN
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：3.5A (Ta)
Rds On (Max) @ Id, Vgs：95mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：3.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：135pF @ 30V
Power - Max：2W (Ta)
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerUDFN
Supplier Device Package：DFN2020-8D
Grade：-
Qualification：-

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UT6KC5TCR

Overview

The UT6KC5TCR is a dual N-channel enhancement-mode MOSFET manufactured by ROHM Semiconductor. It utilizes silicon technology and is housed in an 8-DFN (DFN2020-8D) surface-mount package. The device features a drain-source breakdown voltage of 60V and supports a continuous drain current of 3.5A at 25°C ambient temperature. Key electrical parameters include a maximum on-resistance of 95mΩ at Vgs=10V, a gate charge of 3.1nC at Vgs=10V, and an input capacitance of 135pF at Vds=30V. The component operates within a junction temperature range up to 150°C and has a power dissipation rating of 2W.

Feature Summary

Dual N-channel configuration for efficient space-saving integration
Low on-resistance characteristics for reduced conduction losses
Enhanced thermal performance with high junction temperature capability

Applications

Power management circuits
DC-DC converter designs
Motor control applications

Procurement Notes

Verify the specific ordering suffix and tape-and-reel specifications against the official ROHM Semiconductor datasheet prior to procurement. Confirm that the DFN2020-8D footprint matches the target PCB design requirements. Ensure compliance with RoHS directives as indicated in the product documentation. Cross-reference the manufacturer part number UT6KC5TCR with authorized distributor catalogs to validate authenticity and availability status.

Selection Notes

Select this component for applications requiring a compact dual N-channel solution with moderate voltage ratings. The 60V breakdown voltage suits low-voltage power switching tasks. Consider the 95mΩ on-resistance for efficiency optimization in current loads up to 3.5A. The small DFN2020-8D package is ideal for dense board layouts where thermal dissipation of 2W is manageable.

Part Context

This part belongs to the ROHM UT6K series of power MOSFETs, designed for general-purpose switching applications. The series emphasizes miniaturization through the DFN2020-8D package format. As a dual N-channel device, it allows for half-bridge or synchronous rectifier configurations within a single footprint, reducing overall system component count compared to discrete single-channel alternatives.