SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The UT6MB5TCR is a dual-channel power MOSFET manufactured by ROHM Semiconductor, integrating one N-Channel and one P-Channel transistor within a DFN2020-8D (HUML2020L8) surface-mount package. The device supports a drain-source voltage of ±40V with continuous drain currents of +5.0A for the N-Channel and -3.5A for the P-Channel. Maximum on-state resistance values are specified at 48mΩ for the N-Channel and 122mΩ for the P-Channel. It features a maximum power dissipation of 2.0W and operates across a junction temperature range from -55°C to +150°C.
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm that the specific ordering suffix matches the required tape-and-reel packaging specifications. Ensure storage conditions adhere to humidity barrier bag requirements to maintain solderability before use.
Select this component when a complementary N-P channel pair is required in a minimal footprint. Evaluate thermal resistance characteristics against the expected ambient temperature derating curves. Verify gate drive voltage compatibility with the specified threshold and on-resistance parameters for efficient operation.
This part belongs to the UT6MB5 series of dual MOSFETs designed for compact power switching solutions. It utilizes the HUML2020L8 package variant, providing a standardized form factor for integration into modern printed circuit boards requiring high current density in small areas.
Direct substitutes include other ROHM dual MOSFETs with matching polarity and voltage ratings. Cross-manufacturer replacements require verification of pinout compatibility, thermal resistance limits, and electrical parameter margins.