V10K100DUHM3/H

Diode Arrays Overview

The V10K100DUHM3/H is a high current density surface-mount Trench MOS Barrier Schottky rectifier manufactured by Vishay General Semiconductor. It features a separated cathode configuration within a FlatPAK 5 x 6 package, providing dual diodes with independent control. The device is AEC-Q101 qualified for automotive applications and supports an operating junction temperature range of -40 to +150 °C. Key electrical parameters include a maximum repetitive peak reverse voltage (VRRM) of 100 V and a peak forward surge current (IFSM) of 100 A per diode. The average DC forward current rating is 5 A per diode under infinite heatsink conditions, or 2.4 A when mounted on recommended pad areas. Forward voltage drop characteristics are optimized for efficiency, measuring a maximum of 0.75 V at 5 A and 25 °C, and 0.68 V at 5 A and 125 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology to achieve ultra-low forward voltage drop and reduced power losses.
• Features a separated cathode circuit configuration allowing independent operation of the two internal diodes.
• Complies with MSL level 1 standards per J-STD-020 and withstands a maximum peak reflow temperature of 260 °C.
• Qualified to AEC-Q101 automotive standards, ensuring reliability for demanding vehicle environments.

Diode Arrays Applications

• Low voltage high frequency DC/DC converters
• Freewheeling diodes in power supply circuits
• Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific ordering suffix to confirm the packaging format and reel diameter required for your assembly line. The HM3 suffix indicates AEC-Q101 qualification alongside RoHS compliance. Ensure that the procurement documentation explicitly references document number 87421 to guarantee authenticity and access to the correct technical specifications provided by Vishay General Semiconductor.

Diode Arrays Selection Notes

Select this component when designing systems requiring high current density in a compact surface-mount footprint. The separated cathode design offers flexibility for synchronous rectification or independent load management compared to common cathode alternatives. Consider the thermal resistance values and derating curves to ensure the junction temperature remains within the specified 150 °C limit under expected operating loads.

Diode Arrays Part Context

This part belongs to the V10K series of high current density Schottky rectifiers from Vishay. The series utilizes advanced Trench MOS technology to minimize forward voltage drops while maintaining robust surge current capabilities. The FlatPAK 5 x 6 package provides superior thermal performance and mechanical stability compared to traditional leaded packages, making it suitable for modern automated surface-mount assembly processes.

Diode Arrays Replacement Considerations

Direct replacements must match the 100 V reverse voltage, 5 A average current per diode, and FlatPAK 5 x 6 package dimensions. Verify that any substitute also supports the required 150 °C junction temperature and maintains similar forward voltage characteristics to preserve system efficiency.

Diode Arrays FAQ

What is the difference between the V10K100DU-M3/H and V10K100DUHM3/H variants?

The V10K100DUHM3/H variant is AEC-Q101 qualified for automotive applications, whereas the V10K100DU-M3/H is not specifically qualified under that standard, although both share identical electrical and mechanical specifications.

How does the 'Separated Cathode' configuration benefit circuit design?

The separated cathode configuration allows each diode to operate independently, providing greater flexibility in circuit topology compared to common cathode devices. This is advantageous for applications requiring independent control or specific switching sequences.

What is the maximum reflow soldering temperature for this component?

The component meets MSL level 1 per J-STD-020 and can withstand a maximum peak reflow temperature of 260 °C during surface-mount assembly processes.