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V20100CHM3/4W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 100V 10A TO2203. Review the specifications below when checking this part for your BOM.
The V20100CHM3/4W is a dual high-voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration with two diodes housed in a TO-220AB package. The device supports a maximum repetitive peak reverse voltage of 100 V and an average forward rectified current of 20 A per device (10 A per diode). Key electrical parameters include a peak forward surge current of 150 A, a typical thermal resistance of 2.8 °C/W per diode, and a maximum operating junction temperature of 150 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact package type and delivery mode. Confirm that the component meets the required material categorization standards and environmental compliance specifications before finalizing procurement decisions.
Select this component when designing circuits requiring low forward voltage drops at moderate currents. Ensure the application operates within the specified 150 °C junction temperature limit and respects the 150 A peak surge current rating during transient conditions.
This part belongs to the V20100C series of dual high-voltage TMBS rectifiers. It is functionally equivalent to the VI20100C variant, which utilizes a TO-262AA surface-mount package instead of the through-hole TO-220AB case found in the V20100C model.
The VI20100C-M3/4W serves as a direct functional replacement offering identical electrical characteristics in a TO-262AA surface-mount package.
The maximum repetitive peak reverse voltage (VRRM) is 100 V.
The total average forward rectified current is 20 A per device, distributed as 10 A per diode.
The typical thermal resistance from junction to case is 2.8 °C/W per diode.
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