V20D100C-M3/I

Diode Arrays Overview

The V20D100C-M3/I is a dual high-voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It utilizes SMPD (TO-263AC) surface-mount packaging and features a common cathode circuit configuration. The device supports a maximum repetitive peak reverse voltage of 100 V and provides a total maximum average forward rectified current of 20 A, with 10 A per diode. Key electrical parameters include a peak forward surge current of 120 A and an operating junction temperature range from -40 °C to +150 °C.

Diode Arrays Feature Summary

• Trench MOS Schottky technology for low forward voltage drop and reduced power losses
• Very low profile construction typical height of 1.7 mm suitable for automated placement
• Halogen-free and RoHS-compliant base part number

Diode Arrays Applications

• High frequency DC/DC converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering code suffix against official Vishay documentation to confirm compliance requirements. The M3 suffix indicates halogen-free and RoHS-compliant materials. Confirm that the package designation matches the required SMPD footprint and ensure thermal management aligns with the specified junction-to-ambient resistance values provided in the datasheet.

Diode Arrays Selection Notes

Select this component when designing circuits requiring high-efficiency rectification at 100 V ratings. The TMBS technology offers superior performance compared to standard Schottky barriers. Ensure the application environment stays within the -40 °C to +150 °C junction temperature limits and verify that the PCB copper pad area meets the thermal resistance requirements for the intended load conditions.

Diode Arrays Part Context

This device belongs to the eSMP® series of high-current density Schottky rectifiers designed for demanding power-conversion applications. The V20D100C variant specifically targets 100 V blocking capabilities within the TO-263AC form factor. It represents Vishay's integration of trench MOS barrier technology to minimize conduction losses while maintaining robust reverse leakage characteristics.

Diode Arrays Replacement Considerations

V20D100CHM3/I

Diode Arrays FAQ

What is the typical instantaneous forward voltage at 5 A?

The typical instantaneous forward voltage is 0.56 V at 25 °C and 0.51 V at 125 °C when tested at 5 A.

Is this component qualified for automotive applications?

The standard V20D100C-M3/I is not explicitly listed as AEC-Q101 qualified in the primary ordering information; however, the HM3 suffix variant is designated as AEC-Q101 qualified.

What is the maximum repetitive peak reverse voltage?

The maximum repetitive peak reverse voltage (VRRM) is rated at 100 V.