V20M120M-E3/4W

Diode Arrays Overview

The V20M120M-E3/4W is a dual high voltage Trench MOS Barrier Schottky (TMBS) rectifier in a TO-220AB package. It features a common cathode configuration with two elements, rated for a maximum repetitive peak reverse voltage of 120 V and a total maximum average forward rectified current of 20 A (10 A per diode). The device supports a peak forward surge current of 110 A and operates within a junction temperature range of -55 °C to +175 °C. Electrical characteristics include an instantaneous forward voltage of 0.68 V at 10 A and 125 °C, and a typical thermal resistance of 1.4 °C/W per device.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology to achieve ultra-low forward voltage drop and reduced power losses.
• Designed for high efficiency operation in demanding electronic circuits.
• Features matte tin plated leads that are solderable per J-STD-002 standards.

Diode Arrays Applications

• High frequency DC/DC converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode configurations
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix /4W to confirm tube packaging containing 50 units per tube. Ensure the E3 designation is present to guarantee RoHS compliance and lead finish specifications. Cross-reference the document number 89987 against official Vishay records to validate the revision date and technical accuracy before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component when applications require low forward voltage drops at elevated temperatures to minimize conduction losses. The dual common cathode arrangement allows for efficient use in bridge or synchronous rectification topologies. Verify that the 120 V rating aligns with the system's peak reverse voltage requirements and that the TO-220AB package fits the available thermal management constraints.

Diode Arrays Part Context

This part belongs to the V20M series of dual high voltage TMBS rectifiers manufactured by Vishay General Semiconductor. These devices are engineered to replace traditional silicon p-n junction rectifiers in high-frequency applications where switching losses and heat generation are critical design factors. The TO-220AB case provides robust mechanical mounting and thermal dissipation capabilities.

Diode Arrays Replacement Considerations

Direct replacements must match the 120 V reverse voltage, 20 A total current rating, and TO-220AB footprint. Verify that substitute components support the required 175 °C junction temperature and offer comparable forward voltage characteristics at 10 A.

Diode Arrays FAQ

What is the maximum repetitive peak reverse voltage?

The maximum repetitive peak reverse voltage (VRRM) is 120 V.

How is the forward current distributed between the diodes?

The device has a total maximum average forward rectified current of 20 A, which is distributed as 10 A per diode.

What is the typical thermal resistance per device?

The typical thermal resistance per device (RθJA) is 40 °C/W in free air without a heatsink, while the junction-to-case resistance (RθJC) is 1.4 °C/W.