V20PL50-M3/86A

Single Diodes Overview

The V20PL50-M3/86A is a high current density surface mount TMBS (Trench MOS Barrier Schottky) rectifier manufactured by Vishay General Semiconductor. It features an SMPC (TO-277A) package with a typical height of 1.1 mm, designed for automated placement. The device supports a maximum repetitive peak reverse voltage of 50 V and a maximum average forward rectified current of 20 A. Key electrical characteristics include a peak forward surge current of 240 A and a maximum junction temperature of 150 °C. The component utilizes Trench MOS Schottky technology to achieve low forward voltage drop and low power losses.

Single Diodes Feature Summary

• Utilizes Trench MOS Schottky technology for high efficiency operation
• Features very low profile construction suitable for automated placement
• Provides ultra-low forward voltage to minimize power losses
• Constructed with halogen-free, RoHS-compliant molding compound

Single Diodes Applications

• Low voltage high frequency DC/DC converters
• Freewheeling applications
• Polarity protection circuits

Single Diodes Procurement Notes

Verify the specific ordering suffix /86A corresponds to the 7-inch diameter plastic tape and reel packaging configuration containing 1500 units per base quantity. Confirm that the M3 suffix indicates compliance with JESD 201 class 2 whisker testing requirements. Ensure the procurement documentation explicitly states the material categorization compliance definitions as referenced in the official Vishay documentation.

Single Diodes Selection Notes

Select this component when designing circuits requiring a single Schottky rectifier in a TO-277A surface mount package. The device is appropriate for applications demanding a 50 V reverse voltage rating and up to 20 A continuous forward current. Consider the thermal resistance values provided in the datasheet for heat dissipation planning in confined spaces where the low profile is advantageous.

Single Diodes Part Context

This part belongs to the eSMP series of high current density surface mount rectifiers from Vishay. It represents a transition from traditional planar diode technologies to Trench MOS Barrier Schottky structures, offering improved performance metrics such as reduced forward voltage drop while maintaining compatibility with standard surface mount assembly processes.

Single Diodes Replacement Considerations

Direct replacements must match the SMPC (TO-277A) package outline and maintain equivalent or superior ratings for 50 V reverse voltage and 20 A forward current. Verify that alternative components support the same operating junction temperature range of -40 °C to +150 °C and possess comparable transient thermal impedance characteristics.