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V30100P-E3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 100V 15A TO247AD. Review the specifications below when checking this part for your BOM.
Diode Arrays specifications for V30100P-E3/45
- Description：DIODE ARR SCHOT 100V 15A TO247AD
- Series：TMBS®
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Tube
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：100 V
- Current - Average Rectified (Io) (per Diode)：15A
- Voltage - Forward (Vf) (Max) @ If：850 mV @ 15 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：300 µA @ 100 V
- Operating Temperature - Junction：-40°C ~ 150°C
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-247AD (TO-3P)
- Grade：-
- Qualification：-
Diode Arrays datasheet and documents for V30100P-E3/45
Diode Arrays Overview
The V30100P-E3/45 is a dual high-voltage Trench MOS Barrier Schottky rectifier manufactured by Vishay General Semiconductor. It features a TO-247AD (TO-3P) package with a maximum repetitive peak reverse voltage of 100 V and a total average forward rectified current of 30 A, divided into two diodes of 15 A each. The device exhibits an ultra-low forward voltage drop of 0.57 V at 8 A and 0.65 V at 15 A. It supports a peak forward surge current of 120 A per diode and operates within a junction temperature range of -40 to +150 °C.
Diode Arrays Feature Summary
- Utilizes Trench MOS Schottky technology for low forward voltage drop and reduced power losses
- Features low thermal resistance for efficient heat dissipation in high-power applications
- Includes matte tin plated leads that are solderable per J-STD-002 and JESD22-B102 standards
Diode Arrays Applications
- High frequency inverters
- Switching power supplies
- Freewheeling diodes
- DC-to-DC converters
- Reverse battery protection
Diode Arrays Procurement Notes
Verify the component status as this datasheet identifies the part as a new product from 2008. Confirm availability through authorized distributors or check for official End-of-Life notifications. Ensure the E3 suffix matches RoHS 2002/95/EC compliance requirements for your specific manufacturing process.
Diode Arrays Selection Notes
Select this component when a dual common-cathode configuration is required for 100 V applications. The TO-247AD package is suitable for high-current designs requiring robust mechanical mounting. Consider the 2.0 °C/W thermal resistance per diode for heatsink calculations to maintain junction temperatures within the specified 150 °C limit.
Diode Arrays Part Context
This device belongs to the TMBS® series from Vishay, combining the benefits of Schottky rectification with the reliability of Trench MOS technology. The dual configuration allows for use in full-wave rectification circuits without needing external wiring between separate single diodes, simplifying PCB layout.
Diode Arrays Replacement Considerations
V30100P-E3/4W
Diode Arrays FAQ
What is the typical thermal resistance per diode?
The typical thermal resistance from junction to case (RθJC) is 2.0 °C/W per diode.
Does the component meet lead-free standards?
Yes, the E3 suffix indicates the component meets RoHS 2002/95/EC and WEEE 2002/96/EC directives and passes the JESD 201 class 1A whisker test.
What is the maximum operating junction temperature?
The maximum operating junction and storage temperature range is -40 to +150 °C.
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