V40100K-E3/4W

Diode Arrays Overview

The V40100K-E3/4W is a dual high-voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor - Diodes Division. It features a TO-220AB package with two independent diodes configured for common cathode operation. The device supports a maximum repetitive peak reverse voltage of 100 V and an average forward rectified current of 20 A per diode, totaling 40 A per device. Typical forward voltage drop is 0.63 V at 20 A and 125 °C. It operates within a junction temperature range of -40 to +150 °C.

Diode Arrays Feature Summary

• Trench MOS Barrier Schottky technology providing very low forward voltage drop and optimized efficiency
• Increased ruggedness with reverse avalanche capability for enhanced reliability
• Negligible switching losses suitable for high-frequency converter applications

Diode Arrays Applications

• High frequency converters
• High efficiency SMPS output rectification
• Freewheeling circuits
• Reverse battery protection
• DC-to-DC systems

Diode Arrays Procurement Notes

Verify the specific ordering suffix E3/4W against official documentation to confirm RoHS compliance and tube packaging quantity. Ensure thermal management design accounts for the specified junction-to-case thermal resistance. Confirm that the 100 V rating aligns with system voltage requirements including transient spikes.

Diode Arrays Selection Notes

Select this component when high efficiency and low forward voltage are critical in power conversion designs. The TMBS technology offers superior performance compared to standard silicon rectifiers. Consider the TO-220AB package for through-hole mounting and adequate heat dissipation capabilities in medium-power applications.

Diode Arrays Part Context

This part belongs to Vishay's TMBS series of high-performance Schottky rectifiers. It utilizes advanced trench technology to minimize conduction losses while maintaining robust reverse blocking capabilities. The product line targets modern power supply architectures requiring increased power density and improved energy efficiency.

Diode Arrays Replacement Considerations

DSTF40100C from Littelfuse Inc. is listed as a direct substitute.

Diode Arrays FAQ

What is the typical forward voltage drop at rated current?

The typical instantaneous forward voltage is 0.63 V at an average forward current of 20 A and a junction temperature of 125 °C.

Does the device support reverse avalanche conditions?

Yes, the V40100K features increased ruggedness specifically designed for reverse avalanche capability.

What is the maximum non-repetitive avalanche energy?

The non-repetitive avalanche energy is 67.5 mJ per diode at a junction temperature of 25 °C with an avalanche current of 1.5 A and inductance of 60 mH.