V40M150CHM3/4W

Diode Arrays Overview

The V40M150CHM3/4W is a dual high-voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor - Diodes Division. It features a common cathode configuration in a TO-220AB package. The device supports a maximum repetitive peak reverse voltage of 150 V and a total maximum average forward rectified current of 40 A, rated at 20 A per diode. It withstands a peak forward surge current of 160 A. The component operates within a junction and storage temperature range of -40 °C to +175 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology for ultra-low forward voltage drop and reduced power losses.
• Provides high efficiency operation suitable for demanding power conversion applications.
• Features matte tin plated leads that are solderable per J-STD-002 and JESD 22-B102 standards.

Diode Arrays Applications

• High frequency DC/DC converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance attributes. The M3 designation indicates halogen-free, RoHS-compliant construction meeting commercial grade standards. Confirm the package code matches the required delivery mode, as the standard tube packaging contains fifty units per tube. Ensure technical parameters align with the application requirements before finalizing procurement.

Diode Arrays Selection Notes

Select this component for designs requiring low forward voltage characteristics to minimize conduction losses. The TMBS technology offers superior performance compared to standard silicon rectifiers. Consider the thermal resistance values when designing heatsinking solutions. Validate the operating junction temperature limits against the expected ambient conditions and duty cycles of the target circuit.

Diode Arrays Part Context

This part belongs to the V40M150C series of dual high-voltage Trench MOS Barrier Schottky Rectifiers. The product line emphasizes low power loss and high efficiency. Vishay General Semiconductor - Diodes Division produces these devices using advanced semiconductor manufacturing processes to ensure reliability in high-performance electronic systems.

Diode Arrays Replacement Considerations

Cross-reference with other Vishay TMBS series components sharing identical pinouts and electrical ratings. Verify that any substitute maintains the same TO-220AB mechanical dimensions and thermal characteristics. Ensure the alternative device meets the required 150 V reverse voltage and 20 A per diode current specifications.

Diode Arrays FAQ

What is the maximum operating junction temperature for the V40M150CHM3/4W?

The maximum operating junction temperature is +175 °C.

How is the internal diode configuration arranged?

The device utilizes a common cathode configuration with two independent diodes.

What is the typical instantaneous forward voltage at 5 A and 25 °C?

The typical instantaneous forward voltage is 0.69 V at an forward current of 5 A and an ambient temperature of 25 °C.