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V60120C-E3/4W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 120V 30A TO2203. Review the specifications below when checking this part for your BOM.
Diode Arrays specifications for V60120C-E3/4W
- Description：DIODE ARR SCHOT 120V 30A TO2203
- Series：TMBS®
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Tube
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：120 V
- Current - Average Rectified (Io) (per Diode)：30A
- Voltage - Forward (Vf) (Max) @ If：950 mV @ 30 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：500 µA @ 120 V
- Operating Temperature - Junction：-40°C ~ 150°C
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
Diode Arrays datasheet and documents for V60120C-E3/4W
Diode Arrays Overview
The V60120C-E3/4W is a dual high-voltage Trench MOS Barrier Schottky rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration with two independent diodes housed in a TO-220AB package. The device supports a maximum repetitive peak reverse voltage of 120 V and a total maximum average forward rectified current of 60 A, rated at 30 A per diode. It withstands a peak forward surge current of 300 A per diode. Electrical characteristics include a maximum instantaneous forward voltage of 0.95 V at 30 A and 25 °C, and a maximum reverse current of 500 µA at 120 V and 25 °C. The component operates within a junction temperature range of -40 to +150 °C.
Diode Arrays Feature Summary
- Utilizes Trench MOS Schottky technology for low forward voltage drop and reduced power losses
- Designed for high efficiency operation with low thermal resistance
- Features matte tin plated leads that are solderable per J-STD-002 and JESD 22-B102 standards
Diode Arrays Applications
- High frequency converters
- Switching power supplies
- Freewheeling diodes
- OR-ing diode circuits
- Reverse battery protection
Diode Arrays Procurement Notes
Verify the specific ordering suffix 'E3/4W' corresponds to the TO-220AB tube packaging format. Confirm RoHS compliance status as commercial grade. Ensure technical parameters match application requirements before finalizing procurement orders.
Diode Arrays Selection Notes
Select this component for applications requiring high current handling and low forward voltage drops. Verify thermal management capabilities against the specified thermal resistance values. Ensure the operating environment stays within the defined junction temperature limits.
Diode Arrays Part Context
This part belongs to the V60120C series of dual high-voltage Trench MOS Barrier Schottky rectifiers. It is designed for robust performance in power conversion systems. The E3 suffix indicates lead-free construction compliant with RoHS directives.
Diode Arrays Replacement Considerations
VB60120C-E3/4W is the surface mount equivalent in the D2PAK (TO-263AB) package.
Diode Arrays FAQ
What is the maximum average forward rectified current per diode?
The maximum average forward rectified current is 30 A per diode.
Does the component meet RoHS standards?
Yes, the base part number with the E3 suffix is RoHS-compliant and commercial grade.
What is the maximum non-repetitive peak forward surge current?
The peak forward surge current is 300 A per diode for an 8.3 ms single half sine-wave superimposed on rated load.
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