V60M120C-M3/4W

Diode Arrays Overview

The V60M120C-M3/4W is a dual high-voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features a TO-220AB package with a maximum repetitive peak reverse voltage of 120 V and a total maximum average forward rectified current of 60 A, divided into two 30 A elements in a common cathode configuration. The device exhibits an ultra-low forward voltage drop of 0.43 V at 5 A and 0.69 V at 30 A when the junction temperature is 125 °C. It supports a peak forward surge current of 300 A per diode and operates within a junction and storage temperature range of -40 to +175 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology to achieve low forward voltage drop and reduced power losses.
• Provides high efficiency operation suitable for demanding power conversion applications.
• Features a robust TO-220AB plastic case with matte tin plated leads that are solderable per J-STD-002.

Diode Arrays Applications

• High frequency DC/DC converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix /4W to confirm tube delivery mode containing 50 units per tube. Ensure compliance requirements match the M3 base part number, which indicates halogen-free and RoHS-compliant construction. Confirm thermal management designs account for the specified junction-to-case and junction-to-ambient thermal resistance values under actual operating conditions.

Diode Arrays Selection Notes

Select this component for applications requiring high current density and low conduction losses at elevated temperatures. The common cathode configuration simplifies circuit design for dual-element rectification needs. Evaluate thermal performance against the provided derating curves to ensure reliable operation within the 175 °C maximum junction temperature limit during continuous duty cycles.

Diode Arrays Part Context

This component belongs to Vishay's Dual High-Voltage Trench MOS Barrier Schottky Rectifier series. It is designed as a leaded semiconductor device intended for through-hole mounting on printed circuit boards. The M3 suffix denotes environmental compliance, while the /4W code specifies the standard tube packaging format used for distribution and assembly.

Diode Arrays Replacement Considerations

Cross-reference electrical parameters such as 120 V reverse voltage, 60 A total current rating, and TO-220AB footprint when identifying substitutes. Verify that alternative devices support equivalent thermal characteristics and meet the same regulatory standards for halogen-free and RoHS compliance.

Diode Arrays FAQ

What is the maximum junction temperature for the V60M120C-M3/4W?

The maximum operating junction and storage temperature range extends up to +175 °C.

How is the internal structure configured?

The device contains two independent Schottky diode elements arranged in a common cathode configuration within a single TO-220AB package.

What is the typical instantaneous forward voltage at 5 A?

The typical instantaneous forward voltage is 0.51 V at 25 °C and drops to 0.43 V at 125 °C when tested at 5 A.