V8KM60DUHM3/H

Diode Arrays Overview

The V8KM60DUHM3/H is a high current density surface-mount Trench MOS barrier Schottky rectifier manufactured by Vishay General Semiconductor. It features a separated cathode circuit configuration within a FlatPAK 5 x 6 package. The device supports a maximum repetitive peak reverse voltage of 60 V and provides a total average forward current of 8 A, distributed as 4 A per diode. Key electrical characteristics include a typical instantaneous forward voltage of 0.41 V at an ambient temperature of 125 °C with a forward current of 2 A, and a peak forward surge current rating of 80 A. The component operates within a junction and storage temperature range of -40 to +175 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology to achieve ultra-low forward voltage drop and reduced power losses for high efficiency operation.
• Features a separated cathode configuration that facilitates independent control of the dual diodes within the single package.
• Constructed with matte tin-plated leads that are solderable according to J-STD-002 standards and compliant with JESD 22-B102 requirements.

Diode Arrays Applications

• Low voltage high frequency DC/DC converters
• Freewheeling diodes in power supply circuits
• Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific suffix against official documentation before procurement. The HM3 suffix indicates the component is halogen-free, RoHS-compliant, and qualified under the AEC-Q101 standard for automotive environments. Confirm the required delivery mode matches the available options, such as 7-inch or 13-inch plastic tape and reel configurations, to ensure compatibility with automated assembly equipment.

Diode Arrays Selection Notes

Select this component when designing systems requiring low forward voltage drops at elevated temperatures to maximize energy efficiency. The 60 V reverse voltage rating and 8 A total current capacity make it suitable for robust power conversion stages. Ensure the thermal design accounts for the specified junction-to-ambient resistance to maintain safe operating temperatures during continuous load conditions.

Diode Arrays Part Context

This part belongs to the V8KM series of high current density surface-mount Schottky rectifiers from Vishay. The series is engineered for demanding power-conversion applications where space constraints and thermal performance are critical. The FlatPAK 5 x 6 package provides a compact footprint while maintaining effective heat dissipation capabilities through its exposed pad design.

Diode Arrays Replacement Considerations

V8KM60DU-M3/H

Diode Arrays FAQ

What is the maximum operating junction temperature for the V8KM60DUHM3/H?

The maximum operating junction and storage temperature range extends up to +175 °C.

How is the forward current rated for this dual diode configuration?

The device provides a total average forward current of 8 A, which is split between the two internal diodes, allowing 4 A per diode.

Does the HM3 suffix affect the electrical performance compared to the M3 version?

No, the HM3 suffix denotes additional compliance with AEC-Q101 qualification and halogen-free status, but the electrical ratings remain identical to the M3 variant.