VB30M120CHM3/I

Diode Arrays Overview

The VB30M120CHM3/I is a dual high voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration with two independent diodes in a D2PAK (TO-263AB) surface-mount package. The device supports a maximum repetitive peak reverse voltage of 120 V and an average forward rectified current of 15 A per diode, totaling 30 A for the device. Key electrical characteristics include a low forward voltage drop of 0.52 V at 5 A and 150 A peak forward surge current capability.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology to achieve ultra-low forward voltage and reduced power losses.
• Designed for high efficiency operation with a maximum junction temperature rating of 150 °C.
• Complies with MSL level 1 standards and meets JESD 201 class 2 whisker test requirements.

Diode Arrays Applications

• Solar cell junction box bypass diode protection
• DC forward current applications without reverse bias

Diode Arrays Procurement Notes

Verify that the ordering suffix /I corresponds to tape and reel packaging as specified in the datasheet. Confirm RoHS compliance and halogen-free status associated with the M3 suffix. Ensure the component matches the D2PAK outline dimensions for PCB layout compatibility. Validate thermal resistance parameters against specific heatsink mounting conditions.

Diode Arrays Selection Notes

Select this component for applications requiring low conduction losses and high surge current handling. The TMBS technology offers superior performance compared to standard Schottky rectifiers. Consider the thermal management requirements given the 2.2 °C/W junction-to-case thermal resistance. Verify that the 120 V reverse voltage rating aligns with the system's peak operating voltages.

Diode Arrays Part Context

This part belongs to the VB30M120C series of dual high voltage TMBS rectifiers. It is designed for surface-mount assembly in the D2PAK package. The product line emphasizes low forward voltage drops to enhance overall system efficiency in power conversion applications.

Diode Arrays Replacement Considerations

Direct substitutes within the same series include VB30M120C-E3/4W and VB30M120C-M3/8W. These variants share identical electrical specifications but differ in packaging format, such as tube versus tape and reel.

Diode Arrays FAQ

What is the typical instantaneous forward voltage at 5 A?

The typical instantaneous forward voltage is 0.60 V at 5 A and 25 °C, dropping to 0.52 V at 125 °C.

Does the device meet moisture sensitivity level requirements?

Yes, the device meets MSL level 1 per J-STD-020, allowing for unlimited floor life under controlled conditions.

What is the maximum repetitive peak reverse voltage?

The maximum repetitive peak reverse voltage (VRRM) is rated at 120 V.