Diode Arrays VB40100C-E3/8W product image

VB40100C-E3/8W

$2.51
  • Description:DIODE ARR SCHOT 100V 20A TO263AB
  • Series:TMBS®

SKU:b8e3f817e175 Category: Brand:

  
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VB40100C-E3/8W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 100V 20A TO263AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for VB40100C-E3/8W

  • Description:DIODE ARR SCHOT 100V 20A TO263AB
  • Series:TMBS®
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):20A
  • Voltage - Forward (Vf) (Max) @ If:730 mV @ 20 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 100 V
  • Operating Temperature - Junction:-40°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263AB (D2PAK)
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for VB40100C-E3/8W

VB40100C-E3/8W

Diode Arrays Overview

The VB40100C-E3/8W is a dual high voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration with two diodes in a single TO-263AB (D2PAK) package. The device supports a maximum repetitive peak reverse voltage of 100 V and an average forward rectified current of 20 A per diode, totaling 40 A for the device. It exhibits a low forward voltage drop of 0.67 V maximum at 20 A and 25 °C. The component operates within a junction temperature range of -40 to +150 °C and includes a thermal resistance of 2.0 °C/W per diode.

Diode Arrays Feature Summary

  • Utilizes Trench MOS Schottky technology to achieve ultra-low forward voltage drop and reduced power losses.
  • Provides high efficiency operation suitable for high-frequency applications.
  • Features low thermal resistance for effective heat dissipation.
  • Complies with RoHS directives and meets JESD 201 class 1A whisker test requirements.

Diode Arrays Applications

  • High frequency converters
  • Switching power supplies
  • Freewheeling diodes
  • OR-ing diode circuits
  • Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix /8W indicates tape and reel packaging containing 800 units per tube, distinct from the standard tube quantity. Confirm the TO-263AB package type matches the required PCB footprint. Ensure compliance with the specified material categorization and RoHS standards for the intended market regulations.

Diode Arrays Selection Notes

Select this component for designs requiring a common cathode dual Schottky rectifier with a 100 V rating. The TO-263AB package offers surface mount convenience with a large exposed pad for thermal management. Consider the 0.67 V forward voltage drop at rated current when calculating total power dissipation and system efficiency targets.

Diode Arrays Part Context

This part belongs to the V40100C family of dual high voltage TMBS rectifiers. The VB prefix specifically denotes the TO-263AB (D2PAK) surface mount package variant. Other family members include V40100C for TO-220AB and VF40100C for ITO-220AB packages, sharing identical electrical characteristics but differing in mechanical form factor.

Diode Arrays Replacement Considerations

Direct substitutes within the same Vishay family include V40100C-E3/4W (TO-220AB), VF40100C-E3/4W (ITO-220AB), and VI40100C-E3/4W (TO-262AA). These alternatives share identical electrical ratings but require different mounting techniques and PCB layouts due to package variations.

Diode Arrays FAQ

What is the maximum repetitive peak reverse voltage for this device?

The maximum repetitive peak reverse voltage (VRRM) is 100 V.

Does the VB40100C-E3/8W support avalanche energy conditions?

Yes, it has a non-repetitive avalanche energy rating of 230 mJ per diode at TJ = 25 °C with L = 90 mH.

What is the typical thermal resistance per diode for the TO-263AB package?

The typical thermal resistance (RθJC) per diode is 2.0 °C/W.

VB40100C-E3/8WVB40100C-E3/8W
$2.51
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