VB40170C-M3/I

Diode Arrays Overview

The VB40170C-M3/I is a dual high voltage Trench MOS Barrier Schottky (TMBS) rectifier in a D2PAK (TO-263AB) package. It features a common cathode configuration with a maximum repetitive peak reverse voltage of 170 V and a total maximum average forward rectified current of 40 A (20 A per diode). The device supports a peak forward surge current of 200 A and operates within a junction temperature range of -40 to +175 °C. Electrical characteristics include an instantaneous forward voltage of 0.86 V at 20 A and 25 °C, or 0.68 V at 20 A and 125 °C. Reverse leakage is specified as 250 μA maximum at 170 V and 25 °C.

Diode Arrays Feature Summary

• Trench MOS Schottky technology for low forward voltage drop and power losses
• High efficiency operation suitable for high frequency applications
• Halogen-free and RoHS-compliant construction
• Meets MSL level 1 requirements with a maximum peak reflow temperature of 245 °C

Diode Arrays Applications

• High frequency DC/DC converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix 'I' corresponds to the tape and reel delivery mode containing 800 units per 13-inch diameter plastic reel. Confirm that the base part number VB40170C-M3 indicates halogen-free and RoHS-compliant material categorization. Ensure the component meets JESD 201 class 2 whisker test requirements before finalizing procurement specifications.

Diode Arrays Selection Notes

Select this component when a dual common cathode Schottky rectifier is required for high-frequency switching applications. The TMBS technology provides a favorable trade-off between low forward voltage drop and low leakage current. Verify that the thermal management design accommodates the typical junction-to-case thermal resistance of 1.2 °C/W per diode to maintain safe operating temperatures under rated load conditions.

Diode Arrays Part Context

This device belongs to Vishay's VB40170C series of dual high-voltage Trench MOS Barrier Schottky rectifiers. It utilizes advanced TMBS technology to achieve superior performance compared to standard Schottky diodes. The product line is designed to enhance system reliability and efficiency in modern power conversion architectures requiring fast recovery and low conduction losses.

Diode Arrays Replacement Considerations

The datasheet lists the VB40170C-E3/4W and VB40170C-E3/8W as available models within the same series. These variants share identical electrical characteristics but differ in packaging and delivery mode. Verify pinout compatibility and thermal resistance parameters when substituting these parts.