VB40M120C-E3/8W

$0.76

Description：DIODE ARR SCHOT 120V 20A TO263AB
Series：TMBS®

SKU:ac7c3aa905d9 Category: Diode Arrays Brand: Vishay General Semiconductor - Diodes Division

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

VB40M120C-E3/8W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 120V 20A TO263AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for VB40M120C-E3/8W

Description：DIODE ARR SCHOT 120V 20A TO263AB
Series：TMBS®
Mfr：Vishay General Semiconductor - Diodes Division
Package：Tape & Reel (TR)
Diode Configuration：1 Pair Common Cathode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：120 V
Current - Average Rectified (Io) (per Diode)：20A
Voltage - Forward (Vf) (Max) @ If：890 mV @ 20 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：500 µA @ 120 V
Operating Temperature - Junction：-40°C ~ 150°C
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：TO-263AB (D2PAK)
Grade：-
Qualification：-

Diode Arrays datasheet and documents for VB40M120C-E3/8W

VB40M120C-E3/8W

Diode Arrays Overview

The VB40M120C-E3/8W is a dual high voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration in a D2PAK (TO-263AB) package. The device provides a maximum repetitive peak reverse voltage of 120 V and a total maximum average forward rectified current of 40 A, with 20 A per diode. It supports a peak forward surge current of 250 A per diode. The component operates within a junction temperature range of -40 to +150 °C.

Diode Arrays Feature Summary

Utilizes Trench MOS Schottky technology for ultra-low forward voltage drop and reduced power losses.
Designed for high efficiency operation in demanding power applications.
Meets MSL level 1 requirements per J-STD-020 with a maximum peak reflow temperature of 245 °C.

Diode Arrays Applications

Solar cell junction box bypass diodes
Protection circuits using DC forward current without reverse bias

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging and compliance status. The /8W suffix indicates tape and reel delivery. Confirm RoHS compliance and halogen-free status based on the base part number designation. Ensure thermal management aligns with the specified junction temperature limits during operation.

Diode Arrays Selection Notes

Select this component for applications requiring low forward voltage at high currents to minimize conduction losses. Verify that the 120 V rating accommodates system voltage spikes. Consider the D2PAK package for surface mount assembly and heatsinking capabilities. Validate thermal resistance characteristics against the specific heatsink design.

Diode Arrays Part Context

This part belongs to the VB40M series of dual high voltage TMBS rectifiers from Vishay. It shares the same electrical ratings and physical dimensions as other variants in the family, differing primarily in packaging options and environmental compliance markings. The series is engineered for robust performance in solar and industrial power conversion environments.

Diode Arrays Replacement Considerations

Direct substitutes include VB40M120C-E3/4W and VB40M120C-M3/I, which share identical electrical specifications and pinout configurations. Verify package compatibility and lead finish requirements before substitution.