VBT1060C-M3/8W

Diode Arrays Overview

The VBT1060C-M3/8W is a dual high-voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration in a D2PAK (TO-263AB) surface-mount package. The device supports a maximum repetitive peak reverse voltage of 60 V and an average forward rectified current of 5 A per diode. Key electrical characteristics include a typical instantaneous forward voltage of 0.49 V at 2.5 A and 0.50 V at 5.0 A, with a peak forward surge current rating of 100 A. The component operates within a junction temperature range of -55 °C to +150 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology for low forward voltage drop and reduced power losses
• Designed for high efficiency operation in switching applications
• Compliant with MSL level 1 standards and withstands a maximum peak reflow temperature of 245 °C
• Halogen-free construction that meets RoHS directives

Diode Arrays Applications

• High frequency converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix to confirm the delivery mode, as the /8W designation indicates tape and reel packaging while other suffixes may denote tube packaging. Ensure the base part number matches the required TMBS technology and package outline dimensions. Confirm compliance requirements such as halogen-free status and material categorization against project specifications before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component when a dual common cathode Schottky rectifier is required for high-frequency DC/DC conversion or freewheeling applications. The D2PAK package provides a balance of thermal performance and mounting convenience compared to smaller SMD packages. Consider the 60 V reverse voltage rating and 5 A per diode current capability to ensure adequate headroom for the target circuit design.

Diode Arrays Part Context

This device belongs to the VBT series of dual high-voltage Trench MOS Barrier Schottky rectifiers from Vishay. The series utilizes advanced TMBS technology to achieve superior performance over standard Schottky diodes. The VBT1060C variant specifically offers a 60 V rating, distinguishing it from higher voltage models within the same family.

Diode Arrays Replacement Considerations

Direct replacements must match the D2PAK (TO-263AB) package, 60 V reverse voltage, and dual common cathode configuration. Verify that alternative components support similar forward current ratings and thermal resistance values to maintain system reliability.

Diode Arrays FAQ

What is the maximum operating junction temperature for the VBT1060C-M3/8W?

The maximum operating junction temperature is +150 °C.

Does the VBT1060C-M3/8W meet lead-free manufacturing standards?

Yes, the M3 suffix indicates the component is halogen-free, RoHS-compliant, and meets JESD 201 class 1A whisker test requirements.

What is the typical thermal resistance from junction to case per diode?

The typical thermal resistance per diode is 3.5 °C/W.