VBT2045CBP-E3/4W

Diode Arrays Overview

The VBT2045CBP-E3/4W is a Trench MOS Barrier Schottky Rectifier designed for PV solar cell bypass protection. It features a common cathode configuration in a D2PAK (TO-263AB) package. The device supports a maximum repetitive peak reverse voltage of 45 V and a total maximum average forward rectified current of 20 A, with 10 A per diode. Peak forward surge current is rated at 160 A. Forward voltage drop is specified as 0.41 V at 10 A and 0.33 V at 5 A. Thermal resistance is 3.0 °C/W per diode. Operating junction temperature reaches 200 °C in DC forward current mode.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology to achieve ultra-low forward voltage drop and reduced power losses.
• Optimized for high-efficiency operation in solar cell junction boxes using DC forward current without reverse bias.
• Supports an elevated maximum junction temperature of 200 °C specifically for solar bypass mode applications.

Diode Arrays Applications

• Solar cell junction box bypass diode protection
• PV solar cell bypass protection circuits

Diode Arrays Procurement Notes

Verify the specific ordering suffix /4W to confirm tube packaging delivery. Confirm RoHS compliance via the E3 suffix designation. Validate thermal management requirements against the 3.0 °C/W junction-to-case rating. Ensure application conditions align with the 200 °C junction temperature limit for DC forward current usage.

Diode Arrays Selection Notes

Select this component when low forward voltage drop is critical for system efficiency. Verify that the 45 V reverse voltage rating exceeds the circuit's peak operating voltage. Confirm that the D2PAK package fits the available board space and mounting torque specifications. Evaluate thermal dissipation capabilities based on the derating curves provided in the datasheet.

Diode Arrays Part Context

This part belongs to Vishay's Trench MOS Barrier Schottky series. It is engineered specifically for photovoltaic applications requiring robust bypass protection. The common cathode design integrates two independent diodes within a single surface-mount package. The construction utilizes matte tin-plated leads compatible with standard soldering processes.

Diode Arrays Replacement Considerations

VBT2045CBP-E3/8W

Diode Arrays FAQ

What is the maximum junction temperature for DC forward current applications?

The maximum junction temperature is 200 °C when operating in DC forward current mode without reverse bias for durations up to one hour.

How is the forward voltage drop characterized at different currents?

The forward voltage drop is typically 0.33 V at 5 A and 0.41 V at 10 A.

What is the thermal resistance per diode?

The typical thermal resistance from junction to case is 3.0 °C/W per diode.