Diode Arrays VBT2060G-E3/8W product image

VBT2060G-E3/8W

$0.29
  • Description:DIODE ARR SCHOTT 60V 10A TO263AB
  • Series:-

SKU:99800a4dc6ef Category: Brand:

  
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VBT2060G-E3/8W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 60V 10A TO263AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for VBT2060G-E3/8W

  • Description:DIODE ARR SCHOTT 60V 10A TO263AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):60 V
  • Current - Average Rectified (Io) (per Diode):10A
  • Voltage - Forward (Vf) (Max) @ If:900 mV @ 10 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Current - Reverse Leakage @ Vr:700 µA @ 60 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263AB (D2PAK)
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for VBT2060G-E3/8W

VBT2060G-E3/8W

Diode Arrays Overview

The VBT2060G-E3/8W is a dual high voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It utilizes Trench MOS Schottky technology to achieve an ultra-low forward voltage of 0.50 V at 5 A and 0.63 V at 10 A. The device features a common cathode configuration with two elements, rated for a maximum repetitive peak reverse voltage of 60 V and a maximum average forward rectified current of 10 A per diode. It operates within a junction temperature range of -55 °C to +150 °C and is housed in a D2PAK (TO-263AB) package.

Diode Arrays Feature Summary

  • Trench MOS Schottky technology providing low forward voltage drop and reduced power losses
  • High efficiency operation suitable for demanding power conversion applications
  • RoHS-compliant commercial grade construction with matte tin plated leads

Diode Arrays Applications

  • High frequency inverters
  • Switching power supplies
  • Freewheeling diodes
  • OR-ing diode circuits
  • DC/DC converters
  • Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix /8W to confirm tape and reel delivery mode, as the base part number also supports tube packaging. Ensure compliance requirements match the E3 suffix designation for lead-free and RoHS standards. Confirm thermal management capabilities align with the specified junction-to-case thermal resistance values for your heatsink design.

Diode Arrays Selection Notes

Select this component when low forward voltage drop is critical for minimizing conduction losses in high-frequency switching environments. The common cathode dual configuration simplifies circuit layout compared to discrete single diodes. Evaluate the 60 V rating against peak transient voltages to ensure adequate margin for the intended application environment.

Diode Arrays Part Context

This device belongs to the VT2060G family of dual TMBS rectifiers from Vishay. The family includes variants such as VT206G-E3 for TO-220AB and VIT2060G-E3 for TO-262AA packages. All members share identical electrical characteristics but differ in mechanical housing and mounting configurations to suit various PCB assembly needs.

Diode Arrays Replacement Considerations

Direct replacements include other Vishay parts within the same family: VT2060G-E3/4W (TO-220AB), VFT2060G-E3/4W (ITO-220AB), and VIT2060G-E3/4W (TO-262AA). Cross-package substitution requires verifying pinout compatibility and physical mounting constraints on the target board.

Diode Arrays FAQ

What is the typical thermal resistance per diode for the D2PAK package?

The typical junction-to-case thermal resistance per diode for the VBT2060G-E3/8W is 7.0 °C/W.

Does the device meet moisture sensitivity level requirements?

Yes, the device meets MSL level 1 per J-STD-020, with a maximum peak reflow temperature of 245 °C.

What is the maximum non-repetitive avalanche energy rating?

The non-repetitive avalanche energy rating is 65 mJ per diode at a junction temperature of 25 °C with an inductance of 60 mH.

VBT2060G-E3/8WVBT2060G-E3/8W
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