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VBT2060G-E3/8W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 60V 10A TO263AB. Review the specifications below when checking this part for your BOM.
The VBT2060G-E3/8W is a dual high voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It utilizes Trench MOS Schottky technology to achieve an ultra-low forward voltage of 0.50 V at 5 A and 0.63 V at 10 A. The device features a common cathode configuration with two elements, rated for a maximum repetitive peak reverse voltage of 60 V and a maximum average forward rectified current of 10 A per diode. It operates within a junction temperature range of -55 °C to +150 °C and is housed in a D2PAK (TO-263AB) package.
Verify the specific ordering suffix /8W to confirm tape and reel delivery mode, as the base part number also supports tube packaging. Ensure compliance requirements match the E3 suffix designation for lead-free and RoHS standards. Confirm thermal management capabilities align with the specified junction-to-case thermal resistance values for your heatsink design.
Select this component when low forward voltage drop is critical for minimizing conduction losses in high-frequency switching environments. The common cathode dual configuration simplifies circuit layout compared to discrete single diodes. Evaluate the 60 V rating against peak transient voltages to ensure adequate margin for the intended application environment.
This device belongs to the VT2060G family of dual TMBS rectifiers from Vishay. The family includes variants such as VT206G-E3 for TO-220AB and VIT2060G-E3 for TO-262AA packages. All members share identical electrical characteristics but differ in mechanical housing and mounting configurations to suit various PCB assembly needs.
Direct replacements include other Vishay parts within the same family: VT2060G-E3/4W (TO-220AB), VFT2060G-E3/4W (ITO-220AB), and VIT2060G-E3/4W (TO-262AA). Cross-package substitution requires verifying pinout compatibility and physical mounting constraints on the target board.
The typical junction-to-case thermal resistance per diode for the VBT2060G-E3/8W is 7.0 °C/W.
Yes, the device meets MSL level 1 per J-STD-020, with a maximum peak reflow temperature of 245 °C.
The non-repetitive avalanche energy rating is 65 mJ per diode at a junction temperature of 25 °C with an inductance of 60 mH.
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