VBT3060G-E3/8W

Diode Arrays Overview

The VBT3060G-E3/8W is a dual high voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration in a D2PAK (TO-263AB) surface-mount package. The device supports a maximum repetitive peak reverse voltage of 60 V and an average forward rectified current of 15 A per diode. Key electrical parameters include a maximum instantaneous forward voltage of 0.73 V at 15 A and a non-repetitive peak forward surge current of 150 A. Operating junction temperatures range from -55 °C to +150 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology for low forward voltage drop and reduced power losses
• Designed for high efficiency operation in switching applications
• RoHS compliant commercial grade with matte tin plated leads

Diode Arrays Applications

• High frequency inverters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• DC/DC converters
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix matches the required packaging format, as the datasheet distinguishes between tube and tape-and-reel options. Confirm compliance requirements against JESD 201 class 1A standards for whisker testing. Ensure thermal management aligns with the specified junction-to-case thermal resistance values provided in the datasheet tables.

Diode Arrays Selection Notes

Select this component when a dual common cathode Schottky rectifier is required for low voltage, high current applications. The TO-263AB package facilitates efficient heat dissipation through the exposed pad. Consider the 60 V rating and 15 A continuous current capability to ensure adequate headroom for the target circuit design.

Diode Arrays Part Context

This part belongs to the VT3060G family, which includes variants for different packages such as TO-220AB and ITO-220AB. The 'E3' suffix indicates RoHS compliance and lead-free construction. The '8W' suffix specifically denotes the tape-and-reel packaging format containing 800 units per reel.

Diode Arrays Replacement Considerations

Direct pin-compatible substitutes within the same family include VT3060G-E3/4W (TO-220AB tube), VFT3060G-E3/4W (ITO-220AB tube), and VIT3060G-E3/4W (TO-262AA tube). Verify that the alternative package meets the mechanical and thermal constraints of the existing PCB layout.

Diode Arrays FAQ

What is the maximum junction temperature for the VBT3060G-E3/8W?

The operating junction and storage temperature range extends up to +150 °C.

Is the VBT3060G-E3/8W suitable for wave soldering on the PCB bottom side?

No, the datasheet explicitly states that the device is not recommended for PCB bottom side wave mounting.

What is the typical thermal resistance per diode for this package?

The typical thermal resistance (junction-to-case) per diode for the D2PAK (TO-263AB) package is 3.2 °C/W.